High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Soltani, A.; Rousseau, Michel; Gerbedoen, Jean-Claude; Mattalah, M.; Bonanno, P. L.; Telia, A.; Bourzgui, N.E.; Patriarche, G.; Ougazzaden, A.; BenMoussa, A.

doi:10.1063/1.4882415

Cited by 14 publications

(20 citation statements)

References 14 publications

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“…8,25,26 Higher temperature anneals led to substantial increases in Ni/Au gate leakage, with the leakage current becoming nearly equivalent to the forward on-state gate current after annealing at 700…”

Section: Resultsmentioning

confidence: 99%

“…• C. [5][6][7][8] TiN can also be deposited by versatile methods such as atomic layer deposition (ALD), reactive sputtering, and molecular beam epitaxy (MBE) that can be easily integrated into conventional HEMT process flows. 7,9,10 Despite this promise, limited work has been done to assess the effects of a TiN gate on HEMT reliability under extended electrical or thermal stress, and previous studies have exclusively focused on sputtered TiN rather than ALD TiN.…”

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confidence: 99%

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Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

Shahin

Anderson

Tadjer

et al. 2016

ECS J. Solid State Sci. Technol.

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TiN, a transition metal nitride, has been evaluated as an electrically and thermally stable Schottky gate material for AlGaN/GaN high electron mobility transistors. HEMTs with 75 nm TiN gates deposited via atomic layer deposition at 350°C exhibited improved static and dynamic on-state characteristics compared to Ni/Au-gated HEMTs. Reverse bias gate stressing indicated a higher critical voltage and higher breakdown voltage for the TiN-gated HEMTs. The TiN gated devices exhibited stable DC operation after annealing at temperatures as high as 800°C, while the Ni/Au gates exhibited significant degradation after annealing above 500°C and failed catastrophically at 800°C.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

Shahin

Anderson

Tadjer

et al. 2016

ECS J. Solid State Sci. Technol.

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“…Hence, the Ni/Au‐free gate is required to realize GaN HEMTs in the Si CMOS process line. Researchers have tried Ni/Au‐free gates include Ti, Cr, Ir, Re, Pd, Pt, ITO, TaN, W, WN x , and TiN for the fabrication of AlGaN/GaN HEMTs . Compare with other materials, TiN has a lot of advantages, such as: (i) large work function (∼5 eV ); (ii) compatibility to various CMOS processes, e.g., dry etching, wet etching, sputtering, etc.…”

Section: Introductionmentioning

confidence: 99%

“…; (iii) high thermally stability up to 700 °C ; (iv) low resistivity (∼55 μΩcm for pure TiN , smaller than Ti); (v) low cost, etc. Although AlGaN/GaN HEMTs and MISHEMTs with TiN‐based gate electrode have been demonstrated in recent years , there are still lack of report on the Schottky contact parameters. This work will study the Schottky barrier height (SBH) of sputtered TiN on AlGaN/GaN HEMT structure using current–voltage ( I – V ) and temperature‐dependent current–voltage ( I – V – T ) measurements.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an improved Schottky barrier height (SBH) of ∼1.1 eV, which is larger than the Schottky contacts formed by the other reported TiN‐based stacks and by most of Ni/Au‐free materials. The improvement of SBH is due to the increase of metal work function either by the incorporation of oxygen in sputtered TiN or by using a high N2/Ar ratio during the sputtering process. Although the HEMTs with TiN gate show comparable DC output and transfer characteristics compared to devices with Ni/Au gate, they exhibit enhanced OFF‐state breakdown voltages (BVgd) of ∼48–58 V. This is consistent with the observation of an order of magnitude lower reverse gate leakage current and is also well agreed by the enhanced SBH of the sputtered TiN as compared to the Ni/Au gate. With reference to the HEMTs with Ni/Au gate, a slight increase of dynamic/static on‐resistances (Rds[ON]) ratio (∼8%) was observed in the sputtered TiN gate HEMTs.

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“…AlGaN/GaN heterostructures have been studied as high electron mobility transistors (HEMT) operable at high frequency, high power, and high temperature [1,2]. In these structures, a two-dimensional electron gas (2DEG) with a high carrier concentration and high mobility is induced at the AlGaN/GaN interface [3].…”

Section: Introductionmentioning

confidence: 99%

Surface Analysis of AlGaN Treated with CF<sub>4 </sub>and Ar Plasma Etching

Hirai

Niibe

Kawakami

et al. 2015

e-J. Surf. Sci. Nanotech.

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To understand the surface damage of AlGaN film caused by plasma etching in detail, we etched AlGaN film with CF4 and Ar plasmas. The intensity of ultraviolet (UV) light emitted from the CF4 plasma was very weak at each gas pressure investigated. However, in the case of Ar, a certain degree of UV intensity was observed at gas pressures between 50 and 100 mTorr. The surface etched with the CF4 plasma was as smooth as that of the as-grown film. In the case of Ar, surface roughening occurred at gas pressures between 50 and 100 mTorr. The Al/N and Ga/N ratios of the AlGaN surface etched with Ar plasma increased more significantly than those of the surface etched CF4 plasma, as determined by X-ray photoelectron spectroscopy (XPS). The peak shape of the near-edge X-ray absorption fine structure (NEXAFS) spectra in the N-K absorption edge was broadened by the plasma etching with increasing processing-time. The broadening observed in the case of Ar etching was greater than that during CF4 plasma etching. The observed changes in the surface morphology and crystalline structure of the AlGaN are considered to be caused by the synergistic effect of UV light irradiation from the plasma and ion bombardment of the sample surface. The changes in surface composition, surface roughening, and the disordering of the crystalline structure were found to occur within a shallow region from the surface, and did not occur in deeper regions of the sample. F atoms (ions) were found to penetrate the surface to a depth of about 10 nm in the AlGaN etched with CF4 plasma.

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High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Cited by 14 publications

References 14 publications

Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Surface Analysis of AlGaN Treated with CF<sub>4 </sub>and Ar Plasma Etching

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