High-performance transparent Li-doped indium-tin-zinc-oxide thin film transistor fabricated by radio frequency magnetron sputtering method

Li, Ran; Dai, Shiqian; Ma, Yafeng; Tian, Longjie; Wang, Qi; Zhou, Dongzhan; Zhang, Xiqing

doi:10.1016/j.matlet.2018.07.098

Cited by 5 publications

(3 citation statements)

References 15 publications

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“…In the same year, Beak et al [48] used ALD to prepare ITZO TFT and found that the device reached optimal performance under the condition of In/Zn/Sn = 10 : 70 : 20 and annealed at 400 °C, achieving a mobility of 22 cm 2 /(V•s), an SS of 0.15 V/dec, and a V TH of 0.8 V. In 2020, Liu et al [49] successfully prepared high-quality ITZO TFTs by ultrasonic spray pyrolysis deposition, achieving a high mobility of 43.84 cm 2 /(V•s) and an SS of 0.0974 V/dec, exceeding the performance of the traditional spin-coating method and even the widely used sputtering method (Fig. 5).…”

Section: Optimization Of Deposition Technologymentioning

confidence: 99%

“…Fhu et al [56] investigated the relationship between the ITZO TFT prepared by sputtering and the annealing temperature. They observed that as the annealing temperature increases, the degree of repair of [49] . (a)-(d), © 2020 IEEE.…”

Section: Post-treatmentmentioning

confidence: 99%

“…(c) Hysteretic I DS -V GS characteristics of TFT-A (USPD-deposited) and TFT-B (sputter-deposited). (d) SS versus stress time (NBIS and PBIS) characteristics of TFT-A and TFT-B[49] . (a)-(d), © 2020 IEEE.…”

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confidence: 99%

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Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

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Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

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Section: Optimization Of Deposition Technologymentioning

confidence: 99%

Section: Post-treatmentmentioning

confidence: 99%