High‐Performance, Vertical‐Type Organic Transistors with Built‐In Nanotriode Arrays

Fujimoto, Kiyoshi; Hiroi, Takaaki; Kudo, Kazuhiro; Nakamura, Masakazu

doi:10.1002/adma.200601736

Cited by 73 publications

(41 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The current gain is obtained by dividing J C by J B when V BE is -1.1 or -0.5 V. As V CE is -1.5 V, the maximum on/off ratio of 3 ϫ 10 5 is achieved, and the current gain is still greater than 1000. This on/off ratio is larger than our previous work, 8,10 and is the highest value so far reported for polymer vertical transistors.…”

supporting

confidence: 47%

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Chao

Ku²,

Tsai

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3×105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm2 with current gain greater than 1000.

show abstract

supporting

confidence: 47%

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Chao

Ku²,

Tsai

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Moreover, the on/off ratio is as high as ≈ 10 6 , which is among the best values reported in vertical, shortchannel OFETs. [22][23][24][25] The subthreshold region shows relatively small swing S of 1.6 V per decade with essentially no hysteresis, indicating that the interface between the well-aligned DNTT fi lms and the gate insulator fi lm is formed with minimized bending direction. Essentially no deterioration was observed in the drain current even when the devices were bent to the bending radii as small as 8 mm.…”

Section: Doi: 101002/adma201101179mentioning

confidence: 97%

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

et al. 2011

View full text Add to dashboard Cite

“…To date, various kinds of wearable/stretchable electronic devices have been developed such as flexible display [2][3][4], flexible sensors [5,6], artificial skin [7] and artificial muscles [8]. These flexible wearable/stretchable devices reveal great potential for the next generation electronics.…”

Section: Introductionmentioning

confidence: 99%