We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3×105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm2 with current gain greater than 1000.

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A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5 0-bis(3-dodecyl-2-thienyl)-2,2 0-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 Â 10 4 , and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated. V

We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.