High-Performance WSe₂ Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Abstract

Due to their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe 2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.

Vertical Transistors Based on 2D Materials: Status and Prospects

“…Besides MoS2, other TMDs have been also considered for FETs' fabrication. As an example, WSe2 is a slightly p-doped semiconductor, allowing the fabrication of both p-type and n-type FETs by proper selection of the metal contacts [66][67][68]. However, the problem of the contact resistance still holds also in the case of WSe2.…”

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

“…High-performance ambipolar WSe 2 -FETs have already been reported using dissimilar low and high work function metal contacts to obtain low-resistance, ohmic contacts to electrons and holes, respectively. 7,24 Figure 1b plots the transfer characteristics of a MoS 2 /WSe 2 hetero-FET arranged in the in-series mode. In this configuration, the MoS 2 and WSe 2 films form an overlapped region so that the source and drain electrodes (S/D) are in contact with the films, while leaving the overlapped region away from direct contact with the electrodes.…”

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

“…Wang et al fabricated 2-12 transistors in one circuit to offer a group of functions, such as inverter, static random access memory, etc. CMOS circuits are demonstrated by Yu et al in WSe 2 with a voltage gain of about 38 and a small static dissipation [90]. Although the performance of the present devices seems good, further work still needs to be done to increase operating speeds and decrease the power dissipation for practical applications.…”