High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Orsila, S.; Toivonen, M.; Savolainen, P.; Vilokkinen, V.; Melanen, P.; Pessa, M.; Saarinen, M.; Uusimaa, Petteri; Corvini, P. J.; Fang, Fang; Jansen, M.; Nabiev, R.F.

doi:10.1117/12.344531

Cited by 17 publications

(14 citation statements)

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“…The devices reported by our group reached an output power of 1.1 W at an excitation current of 1.5 A [4]. The relatively large threshold current leads to a slightly smaller conversion efficiency of 30% compared to that in [1] and [2]. Nevertheless, 5000-h reliable operation of 100-µm-wide BA lasers at 600 mW and 15 • C was demonstrated.…”

Section: Introductionmentioning

confidence: 76%

“…A 150-µm-wide diode laser with a resonator length of 1 mm showed a maximum output power of 2.1 W at 15 • C [2]. Devices with 100-µm stripe width reached a slightly lower maximum output power of 2 W with wall-plug efficiency of 37% [1]. For 100-µm stripe width lasers, the authors report reliable operation over 1000 h at 250 mW.…”

Section: Introductionmentioning

confidence: 94%

“…High-power 650-nm BA diode lasers were reported by Orsila et al [1] and Toikkanen et al [2]. The vertical far-field angle of the devices was 41 • [full-width at half-maximum (FWHM)].…”

Section: Introductionmentioning

confidence: 95%

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3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Sumpf

Zorn

Staske

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-µm wide reach output powers of 3 W and conversion efficiencies of about 40% at 15 • C. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuouswave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.

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Section: Introductionmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 94%

See 1 more Smart Citation

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Sumpf

Zorn

Staske

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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“…Reliable operation of high-power laser diodes and laser bars using such a structure has been reported [2][3][4][5][6]. Maximum output powers are around 2 W for single emitters [2,3] and from 7 W [5] to 15 W (T ¼ 10 1C, actively cooled) [4] for laser bars. A typical value for the vertical far-field angle of these devices is 401.…”

Section: Introductionmentioning

confidence: 99%

High-power red laser diodes grown by MOVPE

Zorn

Wenzel

Zeimer

et al. 2007

Journal of Crystal Growth

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“…For even shorter wavelengths GaInP QWs have to be used [107,108,109]. Between 650 nm and 690 nm compressively strained GaInP QWs are usually employed, while tensile strain is introduced for shorter wavelengths around 630 nm.…”

Section: Device Resultsmentioning

confidence: 99%

Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Cited by 17 publications

References 0 publications

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

High-power red laser diodes grown by MOVPE

Epitaxy of High-Power Diode Laser Structures

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