High-power AlGaN/GaN HFETs on Si substrates

Ikeda, Nariaki; Kaya, S.; Li, Jiang; Kokawa, Takuya; Satoh, Yuichi; Katoh, Sadahiro

doi:10.1109/ipec.2010.5542033

Cited by 18 publications

(19 citation statements)

References 7 publications

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“…Carbon is a more attractive p-type dopant for the buffer layer. It does not have a strong memory effect, and its concentration and the breakdown voltage of the buffer layer can be adjusted by changing the epitaxial conditions, as shown in Figure 7 [ 53 , 54 ]. On the other hand, a buffer layer has to be designed to release stress and make the surface flat.…”

Section: Conventional Gan Hemt Technologymentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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Section: Conventional Gan Hemt Technologymentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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“…Figure 5b reports the on-resistance R ON_(MISHEMT) as a function of the channel mobility μ ch calculated for a recessed gate hybrid GaN MISHEMT, assuming a source-drain distance d sd = 13 μm [53] and a gate length L g = 1.5 μm. In the calculation, realistic values of the contact resistance ( R C = 0.5 Ω.mm) and semiconductor sheet resistance ( R SH = 400 Ω/sq) were considered.…”

Section: Normally-off Gan Hemt Technologymentioning

confidence: 99%

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

et al. 2019

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Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

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“…Recently, developments of AlGaN/GaN HFETs for high power, high voltage, and high temperature applications have greatly progressed. Many of the reported transistor structures have been planar types [1][2][3]. On the other hand, vertical device structures are another method to achieve a high breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

Study on leakage current of pn diode on GaN substrate at reverse bias

Sugimoto

Kanechika

Uesugi

et al. 2011

Phys. Status Solidi C

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In this paper, we studied on a leakage current of a pn diode on a GaN substrate isolated by a mesa structure at a reverse bias. The leakage current flowed at a surface of the mesa sidewall across the pn junction. Results of scanning capacitance microscopy and scanning spread resistance microscopy indicated that the surface of the mesa sidewall in the p type region changed to a depleted or a n‐‐layer. Results of auger electron spectroscopy indicated that a concentration of nitrogen decreased near the surface of the mesa sidewall. From these results, we estimated the leakage current was caused by a change of the p type region at the surface of the mesa sidewall to the depleted or n‐‐layer by inductively coupled plasma dry etching, which was used to form the mesa structure. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-power AlGaN/GaN HFETs on Si substrates

Cited by 18 publications

References 7 publications

The Evolution of Manufacturing Technology for GaN Electronic Devices

The Evolution of Manufacturing Technology for GaN Electronic Devices

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Study on leakage current of pn diode on GaN substrate at reverse bias

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