c-Axis-oriented hexagonal Fe 3 N films were epitaxially grown on Si(111) substrates by molecular beam epitaxy using AlN/ 3C-SiC intermediate layers. It was found that the magnetic moments of Fe 3 N epitaxial film faced parallel to the film plane, and that the saturation magnetization per Fe atom was approximately 1.8 B at room temperature, where B is the Bohr magneton. The nitrogen composition in Fe x N (2 < x < 3), and thus its magnetic properties, could be controlled even after the growth by irradiation of a radical nitrogen beam.