High power class F GaN HEMT power amplifier in L band for global positioning systems application

Wu, Hemin; Yuk, Kelvin; Cui, Can; Branner, G.R.

doi:10.1109/wamicon.2018.8363920

Cited by 8 publications

(1 citation statement)

References 6 publications

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“…This is due to the fact that, in the past, solid-state power amplifiers (SSPAs) with comparable performance and reliability were not available. However, with the advent of highly reliable Gallium Nitride (GaN) processes, SSPA at the L and S bands can be efficiently adopted to replace TWTAs, with comparable output power and efficiency capability, yet smaller footprint, lighter weight and lower cost, which can introduce significant benefits for satellite applications [7][8][9][10].…”

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L‐band high power solid‐state power amplifier for aerospace usage

Yang

et al. 2022

Electronics Letters

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This work presents the design, implementation, and experimental results of an L-band solid-state power amplifier (SSPA) developed for the next generation high-power transmitter for the space usage. The microwave frequency nircuit (MFC) is realized by cascading a channel amplifier, a drive power amplifier (PA) and a high PA section. By utilizing the gallium nitride (GaN) HEMTs, the efficiency of the drive PA and high PA are improved to more than 70% over the frequency range from 1.45 to 1.55 GHz, which ensures an overall efficiency of the MFC higher than 66%. Then a high efficiency power-supply based on the phase-array bridge topology is proposed for voltage conversion and output sequence control, which delivers a high efficiency of about 94% at the rated power range. In the 100-MHz operating bandwidth, the SSPA delivers more than 200 W of output power with an associated 3rd order intermodulation product (IM3) and power added efficiency (PAE) better than −18 dBc and 60%, respectively. The gain can be varied from 25 to 56 dB with a minimal step of 0.5 dB through telecommand, whereas the phase can be adjusted within 360°range with a minimal step of 5.6°.

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L‐band high power solid‐state power amplifier for aerospace usage

Yang

et al. 2022

Electronics Letters

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

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This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio-frequency output power of 89 W and a power gain of 52 dB with an associated power-added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two-tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved. | INTRODUCTIONPower amplifiers (PAs) are widely used in wireless communication and radar applications. Microwave frequencies (UHF, Lband, S-band etc.) have a dominant role in commercial and defence applications. Modern communication standards such as GSM, CDMA, W-CDMA, and WiMAX with digital modulation schemes, such as QAM, QPSK, DQPSK, OFDM, are characterised by varying signal envelopes with a high peak-toaverage power ratio [1,2]. To fulfil the requirements of communication standards, PA design includes the frequency of operation, output power, bandwidth, efficiency, gain, linearity, and cost. However, it is challenging to achieve optimum values of all parameters simultaneously [3,4]. Therefore, trade-offs must be made, and a subset of the desired parameters can be satisfied depending on the specific needs of the application. Some traditional trade-offs are gain versus bandwidth, operating frequency versus output power, and linearity versus efficiency [4]. In wireless communication, PA has the main role of amplifying the desired modulated signal before transmission [5]. Thus, multistage PAs (MPAs) are designed to accomplish the need for a link with high gain and high output power. In MPA design, a critical concern is the possibility of oscillations caused by instabilities including very high gain, positive feedback, resonant tanks, poor isolation between DC and radiofrequency (RF) paths, and parametric oscillations of nonlinear capacitances. These instabilities are particularly worse at lower frequencies owing to high gain, and detection to avoid such oscillations is always tedious [5,6].Gallium nitride (GaN), a wideband gap semiconductor, has emerged as a potential candidate to fulfil the requirements of current and future communication systems [7,8]. GaN high electron mobility transistor (HEMT)-based PAs provide a better trade-off with high output power with a compact size, owing to their high output power densities, compared with travelling wave tube amplifiers [9]. Gurdal et al. demonstrated GaN-based...

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Analyzing the performance of class-F power amplifier by comparing microstrip and SSL/SIL transmission lines based matching networks for smart parking solutions for improved efficiency and output power

Priya,

Kaur

2024

14th International Conference on Materials Processing and Characterization 2023

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High power class F GaN HEMT power amplifier in L band for global positioning systems application

Cited by 8 publications

References 6 publications

L‐band high power solid‐state power amplifier for aerospace usage

L‐band high power solid‐state power amplifier for aerospace usage

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Analyzing the performance of class-F power amplifier by comparing microstrip and SSL/SIL transmission lines based matching networks for smart parking solutions for improved efficiency and output power

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