High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

Chen, C.-L.; Smith, F. W.; Clifton, B. J.; Mahoney, L.J.; Manfra, Michael J.; Calawa, A. R.

doi:10.1109/55.82069

Cited by 74 publications

(9 citation statements)

References 8 publications

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“…[1][2][3][4][5] Unlike conventional MBE GaAs, the LT-GaAs grown at 200-300°C is nonstoichiometric owing to the incorporation of 1%-2% excess arsenic, [6][7][8] which is strongly dependent on the growth temperature and arsenic pressure. [6][7][8] The excess arsenic induces a high density of antisite defects As Ga , of the order 10 19 cm Ϫ3 .…”

Section: Introductionmentioning

confidence: 99%

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Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

Luo

Thomas

Morgan

et al. 1996

Journal of Applied Physics

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Articles you may be interested inEffect of thermal annealing on optical emission properties of lowtemperature grown AlGaAs/GaAs multiple quantum wells Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopyThe effects of growth temperature and subsequent annealing temperatures on the electrical properties of the low temperature ͑LT͒ grown GaAs have been investigated. It was found that the resistivity of the as-grown LT-GaAs layer increased with increasing growth temperature, but was accompanied by a reduction of breakdown voltage over the same temperature range. Thermal annealing of the samples caused the resistivity to rise exponentially with increasing annealing temperature T A , giving an activation energy of E A ϭ2.1 eV. The transport of the LT-GaAs layers grown at T g р250°C was found to be dominated by hopping conduction in the entire measurement temperature range ͑100-300 K͒, but following annealing at T A Ͼ500°C, the resistivity-temperature dependence gave an activation energy of ϳ0.7 eV. The breakdown voltage V BD , for as-grown LT-GaAs was enhanced on lowering the measurement temperature, but conversely, decreased over the same temperature range following annealing at T A Ͼ500°C. The hopping conduction between arsenic defects, or arsenic clusters in annealed samples, is believed to be responsible for the observed electrical breakdown properties. Since the resistivities of the as-grown LT-GaAs layers are dependent, solely, on the excess arsenic, which in turn depends on the growth temperature, then the resistivities obtained can be used as a measure of the growth temperature.

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Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] It has been used as the buffer layer 1 to eliminate the side-gate effect and as a gate insulator 2,3 to enhance the breakdown voltage of GaAs-FETs. Owing to its potential application, the electrical properties of annealed LT-GaAs have been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

Luo

Thomas

Morgan

et al. 1996

Journal of Applied Physics

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“…Lastly, the bulk breakdown voltage of this surface layer should be high to prevent premature surface breakdown. Suitable passivation can be provided by thin surface layers grown by low temperature MBE [8][9][10].…”

Section: Surface State Effectsmentioning

confidence: 99%

“…Which mechanism dominates is determined by device structure, bias, channel temperature, and operating conditions. The model also provides an explanation for the success of thin surface insulators formed by low temperature MBE growth in producing significantly increased gate breakdown voltages [8][9][10].…”

Section: Introductionmentioning

confidence: 98%

A Gate Breakdown Mechanism in Mesfets and HEMTs

1991

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A model for gate breakdown in MESFETs and HEMTs is proposed. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts, for the first time, the gate current versus bias behavior observed in experimental data. The model is consistent with the various reports of breakdown and light emission phenomena reported in the literature.

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“…[1][2][3][4][5][6][7][8][9][10] The GaAs-based devices potentially have great advantages over Si-based devices for high-speed and high-power applications, in part, from an electron mobility in GaAs that is ϳ5ϫ greater than that in Si, the availability of semi-insulating GaAs substrates, and a higher breakdown field. Currently, the GaAs metalsemiconductor field-effect transistor (MESFET) is the dominant device for high-speed and microwave circuits.…”

Section: Introductionmentioning

confidence: 99%

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Ye¹,

Wilk²,

Yang³

et al. 2004

Journal of Elec Materi

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We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al 2 O 3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant because Al 2 O 3 possesses highly desirable physical and electrical properties as a gate dielectric. These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, and high dielectric breakdown strength. A short-circuit, current-gain, cutoff frequency (f T ) of 14 GHz and a maximum oscillation frequency (f max ) of 25.2 GHz have been achieved from a 0.65-µm gate-length device. The interface trap density (D it ) of Al 2 O 3 /GaAs is evaluated by the hysteresis of drain-source current, I ds , versus gate-source bias, V gs , and the frequency dispersion of transconductance, g m .

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High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

Cited by 74 publications

References 8 publications

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

A Gate Breakdown Mechanism in Mesfets and HEMTs

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

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