High power-density monolithic linear X-band power amplifier using a low-cost MESFET technology

Negra, Renato; Vogt, R.; Bächtold, W.

doi:10.1109/imoc.2003.1242696

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…The output matching network must match to 50 Ω at frequency of 15 GHz. While, the input matching network of the PA is determined using the same approach as output matching network, where Z S11 * depicted in Figure 5 is the input conjugate of amplifier [7,8]. Finally, both matching networks are fine tuned and optimized for the maximum gain and return loss.…”

Section: B Impedance Matchingmentioning

confidence: 99%

15 GHz medium power amplifier design for Ku-band applications

Rasidah

Rasmi

Maisurah

et al. 2011

2011 IEEE Regional Symposium on Micro and Nano Electronics

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This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of -0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-efficiency (PAE) of 37.02 %. The PA has an input and output return loss at 20.76 dB and 25.19 dB respectively. Having a current consumption of 132 mA, this PA achieves a small signal gain of 22.34 dB. The proposed PA is designed within a die size of about 2.08 x 1.03 mm 2 on GaAs substrate. Index Terms -Cascade, GaAs p-HEMT, Ku-band, MMIC, power added efficiency, power amplifiers.

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Section: B Impedance Matchingmentioning

confidence: 99%