High power GaN-HEMT SPDT switches for microwave applications

Abstract

In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth.

Selex ES GaN Technology improvements, results and R&D approach for Defense and Space application

“…In fact, such inherent robustness, in conjunction with moderate losses of the underlying transmission lines, makes GaN an ideal playground for the realization of low-loss integrated SDPT switches. To this goal, both coplanar [6] and microstrip [7] approaches can be implemented. As an example of the resulting performance, the following Fig.…”

Empowering GaN HEMT models: The gateway for power amplifier design

“…Moreover, because of the high breakdown voltage, high power density is usually accompanied with high conversion efficiency, because the ratio between drain bias voltage and knee voltage can be increased (see eqn. 14). As a consequence, a higher efficiency allows reducing the heat-sink size leading to more compact and efficient transmitter units.…”

“…The aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) High Electron-Mobility Transistor (HEMT) has been attracting a wide and growing interest since its inception in the early 1990s [1][2][3][4][5][6][7][8][9][10]. This great interest stems from the fact that such a wide-band gap semiconductor device is well suited for high-power applications at microwave and millimeter-wave frequencies, making it eligible for a plethora of applications ranging from military to commercial uses [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. In comparison to gallium-arsenide (GaAs), which has traditionally been widely used for high-frequency applications, GaN has superior material characteristics, like higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.…”

Design of GaN-based Microwave Components and Application to Novel High Power Reconfigurable Antennas

“…As a promising high power handling alternative, GaN technology is expected to be a good candidate for the realization of high power HEMT-based switches [69]- [70]. The HEMTs suitability for switch usage stems from the fact that the RF path between source and drain is considered as a voltage-controlled resistor [71].…”