High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties

Peng, Wu-Chang; Chen, Ying-Hung; Chen, Jingyu; He, Ju-Liang; Wuu, Dong−Sing

doi:10.1016/j.mssp.2017.01.005

Cited by 13 publications

(10 citation statements)

References 34 publications

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“…Peng et al [125] deposited a p-type oxide semiconductor of titanium monoxide (TiO) by HiPIMS. The experimental results showed that the crystallinic cubic γ-TiO could be directly grown on an unheated glass substrate.…”

Section: Electrical and Optical Coatingsmentioning

confidence: 99%

High power impulse magnetron sputtering and its applications

Yang

Liu

Chen

2018

Plasma Sci. Technol.

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High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

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Section: Electrical and Optical Coatingsmentioning

confidence: 99%

High power impulse magnetron sputtering and its applications

Yang

Liu

Chen

2018

Plasma Sci. Technol.

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“…Interestingly, this film still have a stable γ-TiO structure, even with such an over-saturated O/Ti ratio. The mechanism behind the formation of oxygen supersaturated γ-TiO by using HIPIMS discharge is reported in our previous study 16 . According to the literature 15 , γ-TiO is with structural vacancies that occur due to the substitution of atoms by structural vacancies in one of the sublattices.…”

Section: Resultsmentioning

confidence: 84%

“…Regardless of deposition conditions, a crystalline and smooth film uniformly deposited on thermally oxidized silicon substrate is obtained even under such a short deposition time of only 45 s; additionally, their morphologies also reveal a very dense almost glassy structure. Apparently, these features are attributed to the advantages of high density plasma and high ionization rate for HIPIMS plasma discharge, resulting in intensified ion bombardment during film growth 16 – 18 . The thickness of the TiO x films prepared at the oxygen flow rate of 15, 17.5 and 20 sccm are estimated to be approximately 16.2, 13.5, and 12.3 nm, respectively, i.e., the growth rate slightly decreased with increase in oxygen flow rate.…”

Section: Resultsmentioning

confidence: 99%

“…Though there are reports of n-channel TiO 2 TFTs 12 , 13 , very few studies have been reported, if not none, to adopt TiO film as active channel for p-type TFTs. In our previous study 16 , this study demonstrated the feasibility of using high power impulse magnetron sputtering (HIPIMS) to prepare crystalline γ-TiO film. Systematic investigation of the γ-TiO films obtained as a function of substrate bias voltage and post-annealing temperature on microstructural, and optoelectrical properties were carried out.…”

Section: Introductionmentioning

confidence: 84%

“…Systematic investigation of the γ-TiO films obtained as a function of substrate bias voltage and post-annealing temperature on microstructural, and optoelectrical properties were carried out. Furthermore, the optimum γ-TiO film showed a p-type characteristic and a high hall hole mobility of 8.2 cm 2 /Vs 16 . Based on the abovementioned results, the aim of this study is to synthesis TiO x film by using HIPIMS technique, and the p-type and n-type for γ-TiO and TiO 2 films, respectively, were achieved by simply varying oxygen flow rate during the film deposition.…”

Section: Introductionmentioning

confidence: 98%

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Tunability of p- and n-channel TiOx thin film transistors

Peng

Chen

et al. 2018

Sci Rep

Self Cite

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To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7 × 104 and 2.5 × 105, respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiOx-based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

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Effects of thermal treatment on hydrophilicity and corrosion resistance of Ti surface

Boonrungsiman

Prompinit

Khemthong

et al. 2018

Surface & Interface Analysis

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Surface treatment of titanium (Ti) surface has been extensively studied to improve its properties for biomedical applications, including hydrophilicity, corrosion resistance, and tissue integration. In this present work, we present the effects of thermal oxidation as surface modification method on metallic titanium (Ti). The Ti foils were oxidized at 300°C, 400°C, 500°C, and 600°C under air atmosphere for 3 hours, which formed oxide layer on Ti surface. The physicochemical properties including surface chemistry, roughness, and thickness of the oxide layer were evaluated in order to investigate how these factors affected surface hydrophilicity, microhardness, and corrosion resistance properties of the Ti surface. The results revealed that surfaces of all oxidized samples were modified by formation of titanium dioxide layer, of which morphology, phase, and thickness were changed according to the oxidized temperatures. Increasing oxidation temperature led to the formation of thicker oxide layer and phase transformation of anatase to rutile. The presence of the oxide layer helped the improvement of corrosion resistance and microhardness. The most improvement in surface roughness was found in the specimens treated at 400°C, which significantly improved surface hydrophilicity. But both surface roughness and hydrophilicity reduced when oxidized at 500°C and 600°C, suggesting that hydrophilicity was dominated by the surface roughness. In addition, this surface treatment did not reduce the biocompatibility of the metallic Ti substrates against murine osteoblasts (MC3T3).

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High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties

Cited by 13 publications

References 34 publications

High power impulse magnetron sputtering and its applications

High power impulse magnetron sputtering and its applications

Tunability of p- and n-channel TiOx thin film transistors

Effects of thermal treatment on hydrophilicity and corrosion resistance of Ti surface

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