High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown  on Pure GaN Substrates

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin–ichi; Iwasa, Naruhito; Yamada, Takehiro; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu; Kozaki, Tokuya; Umemoto, Hitoshi; Sano, Masahiko; Chocho, Kazuyuki

doi:10.1143/jjap.37.l309

Cited by 271 publications

(115 citation statements)

References 9 publications

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“…[1][2][3][4][5][6][7][8][9][10] The growth of nearly TD-free GaN has been realized by the lateral epitaxial overgrowth (LEO) technique, [11][12][13][14][15][16] and the device lifetime of the cw MQW LDs has been extended up to 10,000 hours using low TD density GaN on sapphire 14 and pure GaN substrates 15 prepared by LEO technique. InGaN alloys are attracting special interest because they are adopted as active regions of ultra-violet (UV), 17 blue, 1 green, 1 and amber 18 SQW LEDs and all MQW LDs 10 and they emit bright luminescences despite of the large TD density up to 10 10 cm -3 .…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Studies in InGaN Quantum Wells

Chichibu

Sota

Wada

et al. 1999

MRS Internet j. nitride semicond. res.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.7(1999). AbstractFundamental electronic modulations in strained wurtzite III-nitride, in particular In x Ga 1-x N, quantum wells (QWs) were treated to explore the reason why practical InGaN devices emit bright luminescences in spite of the large threading dislocation (TD) density. The emission mechanisms were shown to vary depending on the well thickness L and InN molar fraction x. The electric field across the QW plane, F, which is a sum of the fields due to spontaneous and piezoelectric polarization and the pn junction field, causes the redshift of the ground state resonance energy through the quantum confined Stark effect (QCSE). The absorption spectrum is modulated by QCSE, quantum-confined Franz-Keldysh effect (QCFK), and Franz-Keldysh (FK) effect from the barrires when, for the first approximation, potential drop across the well (F L) exceeds the valence band discontinuity, E V . Under large F L, holes are confined in the triangular potential well formed at one side of the well. This produces apparent Stokes-like shift in addition to the in-plane net Stokes shift on the absorption spectrum. The QCFK and FK further modulate the electronic structure of the wells with L greater than the three dimensional (3D) free exciton (FE) Bohr radius, a B . When F L exceeds E C , both electron (e) and hole (h) confined levels drop into the triangular potential wells at opposite sides of the wells, which reduces the wavefunction overlap. Doping of Si in the barriers partially screens the F resulting in a smaller Stokes-like shift, shorter recombination decay time, and higher emission efficiency. Finally, the use of InGaN was found to overcome the field-induced oscillator strength lowering due to the spontaneous and piezoelectric polarization. Effective in-plane localization of the QW excitons (confined excitons, or quantized excitons) in quantum disk (Q-disk) size potential minima, which are produced by nonrandom alloy potential fluctuation enhanced by the large bowing parameter and F, produces confined e-h pairs whose wavefunctions are still overlapped when L

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Section: Introductionmentioning

confidence: 99%

Spectroscopic Studies in InGaN Quantum Wells

Chichibu

Sota

Wada

et al. 1999

MRS Internet j. nitride semicond. res.

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“…In particular, the correctness of the schema shown in Fig. 1 has been proved for GaAs ELO layers grown on GaAs [2] or GaAs-coated Si [7] substrates and for GaN ELO layers grown on GaN-coated SiC [10,13] or GaN-coated sapphire [14] substrates. The latter achievement seems to be the most spectacular one.…”

Section: Substrate Defects Filtration In the Elo Proceduresmentioning

confidence: 99%

“…The latter achievement seems to be the most spectacular one. In fact, the significant reduction of dislocation density in the GaN ELO layers has allowed for the continuous wave operation of blue GaN laser at room temperature with a lifetime in the 10 000 hours range [14].…”

Section: Substrate Defects Filtration In the Elo Proceduresmentioning

confidence: 99%

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Żytkiewicz

1998

Acta Phys. Pol. A

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Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metallorganic vapour phase epitaxy will be underlined.

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“…Then, the latest results showed that the lifetime became as long as 1000 [36] and 10 000 hours [37] under RT continuous-wave (CW) operation. Also, high power LDs were fabricated using epitaxially lateral overgrown GaN (ELOG) [38] and GaN substrates [39]. All of these light-emitting devices use an InGaN active layer instead of a GaN active layer because it is difficult to fabricate a highly efficient light-emitting device using a GaN active layer, the reason for which is still not well known.…”

Section: (153)mentioning

confidence: 99%

“…The TD increased the threshold current density of the LDs. Considering this behavior of TDs, free standing GaN substrate, which is made by growing the thick ELOG (200 µm) and, then, removing the sapphire, would be a promising substrate due to a lack of a large size of bulk GaN substrate [39,51].…”

Section: Ingan-based Violet Ldsmentioning

confidence: 99%

Recent Developments in InGaN-Based Blue Leds and Lds

Nakamura

1999

Acta Phys. Pol. A

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UV/blue/green/amber InGaN quantum-well structure light-emitting diodes with an external quantum efficiency of 7.5%, 11.2%, 11.6%, and 3.3% were developed. The localization in the InGaN well layer induced by the In composition fluctuations seems to be a key role of the high efficiency of those InGaN-based light-emitting diodes. When the electrons and holes are injected into the InGaN active layer of the light-emitting diodes, these carriers are captured by the localized energy states before they are captured by the nonradiative recombination centers caused by the large number of threading dislocations. InGaN multi-quantum-well structure laser diodes ' with modulation doped strained-layer superlattice cladding layers grown on the epitaxially lateral overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 hours under-room temperature continuous-wave operation. When the laser diode was formed on the GaN layer above the SiO2 mask region without any threading dislocations, the threshold current density was as low as 2.7 kA cm -2 . When the laser diode was formed on the window region with the high threading dislocation density, the threshold current density was as high as 4.5 to 9 kA cm -2 . A leakage current due to a large number of threading dislocations caused the high threshold current density on the window region.

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High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

Cited by 271 publications

References 9 publications

Spectroscopic Studies in InGaN Quantum Wells

Spectroscopic Studies in InGaN Quantum Wells

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Recent Developments in InGaN-Based Blue Leds and Lds

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