High-power operation of strained InGaAs/AlGaAs single quantum well lasers

Möser, Andreas; Oosenbrug, A.; Latta, E.E.; Forster, Th.; Gasser, M.

doi:10.1063/1.105924

Cited by 65 publications

(11 citation statements)

References 15 publications

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“…Currently, one of the popular active structures for these devices uses a strained In x Ga 1Ϫx As/GaAs quantum well with xϳ0.2. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Although degradation of GaAs/AlGaAs, and InGaAsP/InP-based laser devices, has been studied extensively, [14][15][16][17] there are few studies of degradation of InGaAs/GaAs strained quantum-well lasers. [11][12][13] This study reports a generic degradation mechanism observed in 980 nm lasers, where In out diffusion ͑IOD͒ from the InGaAs quantum well into the GaAs barrier regions is observed.…”

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confidence: 99%

Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Chu¹,

Chand²,

Joyce³

et al. 2001

Applied Physics Letters

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confidence: 99%

Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Chu¹,

Chand²,

Joyce³

et al. 2001

Applied Physics Letters

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“…This effect is mainly caused by an increased amount of free carrier absorption. 13 For all samples that where used in this study the temperature dependence of the internal absorption is almost identical. ␣ i increases from about 3 to about 10 cm Ϫ1 when the temperature is raised from 20 to 100°C.…”

Section: Correlation Between the Gain Profile And The Temperature-indmentioning

confidence: 92%

Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

Klopf

Deubert

Reithmaier

et al. 2002

Applied Physics Letters

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The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser.

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“…Typical values reported are T crit = 120-140°C [11,17,19,28], 150°C [29] and 160°C [30]. COD may appear as a sudden degradation mechanism in genuine cw experiments, i. e., during long-term aging [29,38,76]. This is phenomenologically explained by step-by-step lowered P COD levels due to gradual degradation of the semiconductor material close to the outcoupling facet.…”

Section: Cod Threshold In Cw Operationmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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High-power operation of strained InGaAs/AlGaAs single quantum well lasers

Abstract: Articles you may be interested inHigh-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser J. Appl. Phys. 83, 5561 (1998); 10.1063/1.367390Highpower singlemode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Cited by 65 publications

References 15 publications

Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

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