High-power quantum-dot superluminescent tapered diode under CW operation

Abstract

A high-power quantum-dot superluminescent diode is demonstrated under continuous-wave operation, with an output power of 137.5 mW and a corresponding spectral bandwidth of 21 nm. This represents not only the highest output power, but also a record-high power spectral density of 6.5 mW/nm for a CW-operated superluminescent diode in the 1.1-1.3 μm spectral region, marking more than a 6-fold increase with respect to the state of the art. The two-section contact layout of the reported device introduces additional degrees of freedom, which enable a wide tunability of the bandwidth and power depending on the desired application. A maximum bandwidth of 79 nm was recorded, with an output power of 1.4 mW. The high-power continuous-wave operation of this device would be particularly relevant for continuous, high-speed, high-sensitivity spectroscopy, imaging and sensing applications, as well as in optical communications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Light‐Emitting Device Based on Amplified Spontaneous Emission

“…Reproduced with permission. [136] Copyright 2018, Optica Publishing Group. e) Schematic diagram of SLD with a tapered waveguide.…”

“…This device shows a high output power of 137.5 mW, and a highpower spectral density of 6.5 mW nm −1 in the 1.1-1.3 μm spectral region. [136] In addition to the above single-section devices, there are many manufacturing steps for multisection devices, and the operation is complicated due to multiple arrangements of drive currents. But the multisection device allows customized emission spectra and longitudinal multiplexing.…”

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

“…[18] For QD-SLDs with a central wavelength in the O-band, and utilizing the common contribution of GS and ES to broaden the spectrum, their spectrum dip is not less than 0.2 dB. [19][20][21] In addition, it is found that doping technology is often used to improve the performance of QD-SLDs, such as p-type modulation doping technology. [22] However, it can only increase the output power, but not broaden the spectrum.…”

Stochastic Simulation of Emission Spectra and Classical Photon Statistics of Quantum Dot Superluminescent Diodes

“…< using a broadband emitting QDSLD [17]. To this day, effort is being put into developing more efficient and high-powered QDSLDs [18] [19] [20].…”