We demonstrate the first semiconductor mode-locked lasers for ultrashort pulse generation at the 760 nm waveband. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, resulting in the generation of pulses at around 766 nm, with pulse durations down to ~4 ps, at pulse repetition rates of 19.4 GHz or 23.2 GHz (with different laser cavity lengths of 1.8 mm and 1.5 mm, respectively). The influence of the bias conditions on the mode-locking characteristics was investigated for these new lasers, revealing trends which can be ascribed to the interplay of dynamical processes in the saturable absorber and gain sections. It was also found that the front facet reflectivity played a key role in the stability of mode-locking and the occurrence of self-pulsations. These lasers hold significant promise as light sources for multi-photon biomedical imaging, as well as in other applications such as frequency conversion into the ultraviolet and radio-over-fibre communications.

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A high-power quantum-dot superluminescent diode is demonstrated under continuous-wave operation, with an output power of 137.5 mW and a corresponding spectral bandwidth of 21 nm. This represents not only the highest output power, but also a record-high power spectral density of 6.5 mW/nm for a CW-operated superluminescent diode in the 1.1-1.3 μm spectral region, marking more than a 6-fold increase with respect to the state of the art. The two-section contact layout of the reported device introduces additional degrees of freedom, which enable a wide tunability of the bandwidth and power depending on the desired application. A maximum bandwidth of 79 nm was recorded, with an output power of 1.4 mW. The high-power continuous-wave operation of this device would be particularly relevant for continuous, high-speed, high-sensitivity spectroscopy, imaging and sensing applications, as well as in optical communications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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A wide spectral asymmetry between the front and rear facets of a tapered chirped quantum dot multi-section superluminescent diode is reported. The spectral asymmetry between the two facet outputs was found to be tunable and highly dependent on the bias asymmetry between the two contact sections, with a spectral mismatch of up to 14 nm. Numerical simulations confirmed a relationship between this spectral asymmetry and the non-uniform filling of the quantum dots’ confined states when different current densities are applied to the device electrodes. The results from this investigation open up an additional degree of freedom for multi-section superluminescent diodes, which could pave the way for optical bandwidth engineering via multiplexing the spectral output from both facets, using only a single device.