High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode

Fu, Zhilei; Yu, Hui; Zhang, Qiang; Wang, Xiaofei; Xia, Penghui; Yang, Jianyi

doi:10.1364/ol.44.005582

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…Optical photodetectors capable of handling highpower levels are essential in such links [191][192][193]. To improve the power-handling capacity of waveguideintegrated Si-Ge photodetectors, a few promising solutions have been reported in recent years [119,[194][195][196][197][198]. A limitation with low-power detector designs is that they mostly rely on a waveguide-coupled chip architecture with evanescent or butt-coupling light injection.…”

Section: High-power Photodiodesmentioning

confidence: 99%

“…A similar concept, with a 16-stage distributed traveling-wave photodetector was investigated by Bogaert et al [197], achieving DC photocurrent of about 100 mA and a bandwidth of 27.5 GHz. An improved distributed traveling-wave photodetector design was reported by Fu et al [198] with the help of an aperiodically loaded open-circuit electrode. This configuration yielded maximum output powers of 10.2 and 6.5 dBm at 5 and 10 GHz cutoff frequencies, respectively.…”

Section: High-power Photodiodesmentioning

confidence: 99%

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Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

et al. 2020

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Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

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Section: High-power Photodiodesmentioning

confidence: 99%

Section: High-power Photodiodesmentioning

confidence: 99%

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

et al. 2020

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“…Meanwhile, silicon photonics has emerged as a potential optical interconnection technology due to its low cost, high integration and compatibility with complementary metal oxide semiconductor (CMOS) process. Various compact silicon photonic integrated devices have been successfully developed, including active components such as Si/Ge photodetectors [2][3][4], Si/Ⅲ-Ⅴ lasers [5,6], and siliconbased modulators [7][8][9], as well as passive devices such as silicon optical filters [10,11] and mode multiplexers [12]. Silicon optical filters have been well studied as key devices in wavelength division multiplexing (WDM) systems.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Broadband Optical Filter Based on step-chirped Multimode Waveguide Bragg Grating

et al. 2024

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An ultra-broadband optical filter based on stepchirped multimode waveguide Bragg grating (SCMWBG) with low insertion loss, high sidelobe suppression ratio (SLSR), compact size and relaxed fabrication accuracy is demonstrated on SOI platform. The grating length of SCMWBG is divided into grating segments with constant periods, and the period of each segment increases in a fixed step length of 1 nm. Each grating segment of the proposed SCMWBG is designed according to the phase-matching condition. The device is fabricated by a 193 nm DUV lithography, and employs complementary lateralmisalignment apodization to suppress the sidelobes. The measured insertion loss, SLSR and 3-dB bandwidth of fabricated SCMWBG are 1.2 dB, 17 dB and 72 nm, respectively.

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“…However, due to the space-charge screening effect and thermal failure, there is a conflict between saturation RF output power and operation bandwidth for the traditional photodetector [2,3]. An advisable solution is split the incident optical power into multiple PDs and then integrating them by electrode configuration, including lumped electrode [4] and traveling-wave (TW) electrode [5][6][7][8]. Although the TW electrode is favorable for high bandwidth, it usually needs a matching impedance at the input terminal to avoid the detrimental RF reflection [9].…”

Section: Introductionmentioning

confidence: 99%

Bandwidth enhancement of traveling wave photodetector with inductive gain peaking

Wei

Xia

et al. 2023

AOPC 2022: Optoelectronics and Nanophotonics

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We demonstrate the 4-stage and 8-stage silicon traveling-wave photodetectors (TWPDs) with inductive gain peaking technique. Compared with un-peaked TWPDs, the bandwidths of 4-stage and 8-stage TWPDs integrated with inductors are improved from 32 GHz to 44 GHz, and from 16GHz to 24 GHz, respectively. It is experimentally validated that gain peaking is an effective technology to improve bandwidths for multiple-stage TWPDs.

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High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode

Cited by 9 publications

References 13 publications

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Ultra-Broadband Optical Filter Based on step-chirped Multimode Waveguide Bragg Grating

Bandwidth enhancement of traveling wave photodetector with inductive gain peaking

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