High Power Ultra Compact VCO with Active Reactance Concepts at 24 GHz

Sonmez, E.; Trasser, Andreas; Schad, K.-B.; Abele, P.; Schumacher, Hermann

doi:10.1109/euma.2001.339165

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…The use of HBT tail injector can increase injection efficiency due to larger HBT transconductance than that of MOSFET. SiGe HBT active-inductors have been used to design a mixer [7] and VCOs [8], [ The proposed divide-by-4 ILFD shown in Fig. 1 was designed and implemented with the TSMC 0.35 m SiGe BiCMOS technology.…”

Section: Introductionmentioning

confidence: 99%

A Tail-Injected Divide-by-4 SiGe HBT Injection Locked Frequency Divider

Jang

Liu

Chung

2009

IEEE Microw. Wireless Compon. Lett.

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This letter presents a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) divide-by-4 injection locked frequency divider (ILFD). The ILFD is based on a single-stage voltage-controlled oscillator with active-inductor, and was fabricated in the 0.35 m SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. Measurement results show that when the supply voltage V DD is 3.1 V and the tuning voltage is tuned from 2.0 to 2.8 V, the divider free-running oscillation frequency is tunable from 2.12 to 2.76 GHz, and at the incident power of 0 dBm the operation range is about 1.15 GHz, from the incident frequency 8.55 to 9.7 GHz. The die area is 0.65 0.435 mm 2 . Index Terms-Active inductor, divide-by-4 injection-locked frequency divider (ILFD), operation range, SiGe heterojunction bipolar transistor (HBT), tail injection.

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Section: Introductionmentioning

confidence: 99%

A Tail-Injected Divide-by-4 SiGe HBT Injection Locked Frequency Divider

Jang

Liu

Chung

2009

IEEE Microw. Wireless Compon. Lett.

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“…In comparison to [6] only the bias current is increased and an on-wafer spiral inductor is added for DC supply. Figure 5 shows a chip photograph of the realized MMIC prototype.…”

Section: A Preamplifiermentioning

confidence: 99%

A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process

Sonmez

Trasser

Schad

et al.

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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The authors have demonstrated a fully integrated receive frontend addressing the ISM-Band at 24GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 pm, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.

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