High pressure annealing of Europium implanted GaN

Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, Iman S.; Boćkowski, M.

doi:10.1117/12.906810

Cited by 37 publications

(33 citation statements)

References 16 publications

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“…Namely, post implantation high temperature annealing treatments are widely used to recover the crystal structure and to promote the optical activity of the implanted ions. 16,17 In fact, this approach is needed since the optical activity of the implanted RE ions is only achieved by thermal treatments. 18 Additionally, during the implantation the damage can be reduced using implantation angles that allow the channeling of the implanted ions, decreasing the first knock-on collisions or using relatively high temperatures during the process.…”

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confidence: 99%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

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Al x Ga 1-x N (x ¼ 0.15 and 0.77) films, grown by halide vapor phase epitaxy, were implanted with 300 keV Tm ions. Implantation damage accumulation is investigated with Rutherford backscattering spectrometry/channeling (RBS/C), transmission electron microscopy (TEM), and high resolution X-ray diffraction (XRD). Distinct damage behavior for samples with different AlN contents was found. Surface nanocrystallization occurs for samples with x ¼ 0.15, similar to implantation effects observed in GaN. Samples with x ¼ 0.77 approach the behavior of AlN. In particular, surface nanocrystallization is suppressed and the depth range of the stacking fault network, typical for implanted III-nitrides, is decreased. The crystalline quality of the sample with x ¼ 0.15 was investigated to compare random and channeled implantation, showing less concentration of damage but with a higher range for channeled implantation. Surprisingly, the strain field caused by the implantation reaches much deeper into the sample than the defect profiles measured by RBS/C and TEM. This is attributed to the fact that XRD is much more sensitive to low defect densities caused by ions which are channeled to deep regions of the sample. Published by AIP Publishing.

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confidence: 99%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

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“…Details of the sample preparation can be found in Ref. [13]. One sample was grown and Mg-doped by HVPE prior to implantation/annealing.…”

Section: Methodsmentioning

confidence: 99%

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

et al. 2018

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Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing.

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“…Therefore further annealing was performed using high temperature and high pressure (HTHP) at 1250 ºC and 1400 ˚C in a 1.1 GPa N 2 atmosphere for 30 min. The HTHP annealing was performed at UNIPRESS, Poland and suppresses the dissociation of GaN at temperatures well above the MOCVD growth temperature 27,28 .…”

Section: Methodsmentioning

confidence: 99%

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Lorenz¹,

Redondo-Cubero²,

Lourenço³

et al. 2016

SPIE Proceedings

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Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 ºC resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 ºC results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.

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High pressure annealing of Europium implanted GaN

Cited by 37 publications

References 16 publications

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

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