High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary

Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; Kim, Giuk; Shin, Hunbeom; Gaddam, Venkateswarlu; Jeon, Sanghun

doi:10.1021/acsaelm.3c00623

Cited by 4 publications

(2 citation statements)

References 60 publications

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“…The capability to crystallize HZO at low temperatures results from an increase in zirconia’s dielectric loss factor under microwave irradiation and sufficient thermal energy. As a result, the FMA-HZO device even at a relatively low annealing temperature of 250 °C has better ferroelectric characteristics than the RTA-HZO device. , …”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Joh,

Nam,

Jung

et al. 2023

ACS Appl. Mater. Interfaces

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In order to overcome the bottleneck between the central processor unit and memory as well as the issue of energy consumption, computing-in-memory (CIM) is becoming more popular as an alternative to the traditional von Neumann structure. However, as artificial intelligence advances, the networks require CIM devices to store billions of parameters in order to handle huge data traffic demands. Monolithic three-dimensional (M3D) stacked ferroelectric thin-film transistors (FeTFTs) are one of the promising techniques for realizing high-density CIM devices that can store billions of parameters. In particular, oxide channel-based FeTFTs are well suited for these applications due to low-temperature processes, nonvolatility, and 3D integration capability. Nevertheless, the M3D-integrated CIM devices including hafnia ferroelectric films need the high-temperature annealing process to crystallize the ferroelectric layer, making M3D integration difficult. When the FeTFTs are fabricated with an M3D structure, the high-temperature process causes thermal issues in the underlying devices. Here, we present the focused microwave annealed (FMA) oxide FeTFTs with M3D integration at a low temperature of 250 °C. We confirmed that the FeTFTs with metal–ferroelectric-metal–insulator–semiconductor structure exhibited a large memory window of 3.2 V, good endurance over 106 cycles, and a long retention time of 105 s. To understand the different electrical characteristics of FeTFTs in the top and bottom layers, we experimentally analyzed the density of the state of the oxide channel and ferroelectric properties of the ferroelectric gate insulator by using multifrequency capacitance–voltage measurement and nucleation-limited-switching model analysis, respectively. With our approach, we demonstrate for the first time a vertical stacked FeTFTs-based ternary-content-addressable memory (TCAM) cell for CIM application. We believe that the proposed M3D-stacked TCAM cells composed of FeTFTs can be used in high-density memory, energy-efficient memory, and CIM technology.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Joh,

Nam,

Jung

et al. 2023

ACS Appl. Mater. Interfaces

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“…The fully CMOS-compatible and highly scalable fluorite-structure ferroelectrics are anticipated to overcome the drawbacks of traditional perovskite ferroelectrics and open up new development opportunities in fields such as energy-related applications, [35][36][37] logic-in-memory architecture, [38][39][40][41] neuromorphic systems [42][43][44][45] and non-volatile memory. [46][47][48][49][50] Particularly, fluorite ferroelectric based FTJ has been thoroughly explored since the initial report of fluorite structure ferroelectrics. The majority of papers concentrate on methods for enhancing TER effects through the engineering of device structure, [51][52][53] ferroelectric barrier, [54][55][56] and interfacial characteristics.…”

Section: Introductionmentioning

confidence: 99%

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

Hwang,

Goh,

Jeon

2023

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The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite‐structured FTJs provide a number of benefits over conventional perovskite‐based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite‐structured FTJs is explored and contrasted with perovskite‐based FTJs and other 2‐terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic‐in‐memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite‐structure FTJs. Finally, the materials and device integration difficulties related to fluorite‐structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite‐structure FTJs while also describing potential future possibilities for optimization.

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Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

Oh,

Jang,

Habibi

et al. 2024

Adv Materials Technologies

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With the increasing demand for high‐performance computing and storage solutions, industries are under pressure to deliver enhanced‐density, high‐speed, cost‐efficient, and reliable memory technologies. The development of advanced high dielectric constant (high‐k) dielectrics for dynamic random‐access memory (DRAM) remains essential yet challenging, with a need for further advancements on scaling and mass production compatibility. A significant advancement has been the discovery of morphotropic phase boundary (MPB) in HfO2‐based ferroelectrics, offering a potential solution to enduring issues in DRAM capacitor technology. The superior performance of MPB‐based HfxZr1‐xO2 film systems as high‐k dielectrics (k > 60) provides a promising avenue for advancing DRAM technology. This review article aims to propel DRAM development by detailing the principles of MPB‐based high‐k dielectrics, outlining crucial material and engineering parameters, and addressing the need for precise evaluation and analysis, which have previously been neglected. It also discusses the ongoing challenges and future directions in this field.

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High Pressure Microwave Annealing Effect on Electrical Properties of Hf_xZr_1–xO Films near Morphotropic Phase Boundary

Cited by 4 publications

References 60 publications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

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High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary

Cited by 4 publications

References 60 publications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

Exploring the Morphotropic Phase Boundary in HfO2‐Based Ferroelectrics for Advanced High‐k Dielectrics

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High Pressure Microwave Annealing Effect on Electrical Properties of Hf_xZr_1–xO Films near Morphotropic Phase Boundary

Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics