High-quality cutting of polished single-crystal silicon by wire electrical discharge machining

Takino, Hideo; Ichinohe, Toshimitsu; Tanimoto, Katsunori; Yamaguchi, Syuichi; Nomura, Kazushi; Kunieda, Masanori

doi:10.1016/j.precisioneng.2004.12.004

Cited by 31 publications

(11 citation statements)

References 14 publications

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“…The micro-WEDM process has extensively been used for the slicing of thin silicon wafers owing to its contactless nature. Wafers from n-Type single-crystal silicon ingot and precise cutting of polished single-crystal silicon using different dielectrics and applying the suitable mask on both sides of the wafer were performed using WEDM process [9][10][11]. The thermal damage caused to the wafer was observed to be minimum using various characterization methods such as SEM, TEM, and Raman spectroscopy [12].…”

Section: Introductionmentioning

confidence: 99%

Thin-wall micromachining of Ti–6Al–4V using micro-wire electrical discharge machining process

Singh

Ramkumar

2019

J Braz. Soc. Mech. Sci. Eng.

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Machining of delicate thin members having extremely small thickness as compared to the other two dimensions is a precarious task when performed using conventional fabrication techniques. Non-contact machining process, such as micro-wire electrical discharge machining (micro-WEDM) process, an advanced means of machining, offers an appropriate way to machine thin-wall structures in an utmost precise manner. In the present work, thin-wall micromachining of Ti-6Al-4V is performed while utilizing the contactless, negligible thermal damage, and deformation-free nature of micro-WEDM process energized through the resistance-capacitance generator. The objective is to explore the feasibility of a minimum possible wall thickness. Performing the thin-wall micromachining using wire step-over approach, it is established that a wall of average thickness 8.47 µm with an end deflection and a wall of thickness about 15 µm free from end deflection is possible to fabricate using micro-WEDM process. It achieves a high aspect ratio of 70 corresponding to the minimum thickness of the wall. What's more, a theoretical analysis is carried out to illustrate the functional relationship between wall-end deflection with workpieces' thermophysical properties, discharge parameters, and the geometric parameters of the wall. Finally, the comparative assessment of wall-end deflection and volumetric material removal rate attained with three different materials, namely Ti-6Al-4V, mild steel, and SS-304, reveal that thermophysical properties of workpiece material play a critical role in determining the wall-end deflection and the resultant volumetric material removal rate.

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Section: Introductionmentioning

confidence: 99%

Thin-wall micromachining of Ti–6Al–4V using micro-wire electrical discharge machining process

Singh

Ramkumar

2019

J Braz. Soc. Mech. Sci. Eng.

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“…This enables the work piece to be rotated 90°after the first round of cuts without dismounting. Synthetic EDM oil (Commonwealth Eurosupreme) was used as the dielectric fluid, which has been found to produce better edges in WEDM of silicon (Takino et al 2005). De-ionized water can be used as an alternative but it tends to leave an oxidized recast layer on the surface of the machined work piece.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of compliant high aspect ratio silicon microelectrode arrays using micro-wire electrical discharge machining

et al. 2009

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This paper reports on the fabrication of high aspect ratio silicon microelectrode arrays by micro-wire electrical discharge machining (l-WEDM). Arrays with 144 electrodes on a 400 lm pitch were machined on 6 and 10 mm thick p-type silicon wafers to a length of 5 and 9 mm, respectively. Machining parameters such as voltage and capacitance were varied for different wire types to maximize the machining rate and to obtain uniform electrodes. Finite element analysis was performed to investigate electrode shapes with reduced lateral rigidity. These compliant geometries were machined using l-WEDM followed by a two step chemical etching process to remove the recast layer and to reduce the cross sections of the electrodes.

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“…Takino et al, 11 in their experiments on polished silicon wafers, showed that the wafer surfaces cut in water are rougher than those cut in oil. Takino et al 12 showed that rough edges on silicon plates while cutting in water and/or oil can be reduced by applying electroconductive vinyl chloride resin masks on silicon plates. Peng and Liao 4 used medium-or heavy-doped silicon ingots for slicing, using wire-EDM process.…”

Section: Introductionmentioning

confidence: 99%

Modeling of silicon ingot slicing process by wire–electrical discharge machining

Dongre

Vesivkar

Singh

et al. 2013

Proceedings of the Institution of Mechanical Engineers, Part B:

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Photovoltaic industry requires the cutting of silicon ingots into wafers in order to get minimum kerf loss, to facilitate manufacturing of thin wafers and to provide high productivity. Existing silicon ingot slicing processes like inner diameter saw and abrasive wire cutting have drawbacks of high kerf loss, lower finish and limitation on the thickness of wafer. In order to have economically viable photovoltaic technology, efficiency of wafer manufacturing process needs to be improved. The wire-electrical discharge machining technology is adopted as a new candidate for silicon slicing and is compared with the existing procedures and testified whether it can inevitably substitute the inner diameter saw or even compete with wire saws in some manufacturing orders. The main focus of this article is to understand the effect of processing parameters on the cutting process, so the parametric conditions delivering high slicing rate and low kerf loss can be achieved. Modeling of wire-electrical discharge machining is difficult as it involves several disciplines such as thermodynamics, hydrodynamics, electrodynamics and electromagnetics. Various researchers have proposed analytical models for electrical discharge machining and wire-electrical discharge machining through the use of electrothermal concepts. However, a comprehensive model that predicts the erosion rate in wire-electrical discharge machining process is needed. This article considers moving the line heat source nature of the wire to predict the temperature profiles of the workpiece in order to calculate the erosion rate. The results thus obtained have been analyzed experimentally, and conclusions have been derived enabling a better understanding of future research prospects and applications.

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High-quality cutting of polished single-crystal silicon by wire electrical discharge machining

Cited by 31 publications

References 14 publications

Thin-wall micromachining of Ti–6Al–4V using micro-wire electrical discharge machining process

Thin-wall micromachining of Ti–6Al–4V using micro-wire electrical discharge machining process

Fabrication of compliant high aspect ratio silicon microelectrode arrays using micro-wire electrical discharge machining

Modeling of silicon ingot slicing process by wire–electrical discharge machining

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