High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Yang, J.; Sun, C. J.; Chen, Q.; Anwar, M. Zubair; Khan, M. Asif; Nikishin, S. A.; Seryogin, G. A.; Osinsky, A.; Chernyak, Leonid; Temkin, H.; Hu, Chimin; Mahajan, S.

doi:10.1063/1.117247

Cited by 98 publications

(39 citation statements)

References 13 publications

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“…Silicon is increasingly being used as a substrate for GaN growth [2,3] GaN deposited on silicon (Si) substrates has great advantages including excellent wafer quality, less hardness and more design flexibility with current silicon electronic circuit system [4][5][6]. The Si substrate for GaN growth has some advantages over other substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Chaudhari¹,

Chinchamalatpure²,

Ghosh³

2011

AJAC

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The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. Xray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600˚C. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fabricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN without presence of elemental gallium and Ga 2 O 3 in this film.

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Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Chaudhari¹,

Chinchamalatpure²,

Ghosh³

2011

AJAC

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“…2 The diffusion length of carriers is a material parameter that greatly influences the performance of electronic and opto-electronic devices. In the case of GaN, only few papers [3][4][5][6][7] report diffusion length data measured by different techniques, in the range from 0.1 to 3.4 m depending on the carrier concentration and crystal quality. Electron beam induced current ͑EBIC͒ in the scanning electron microscope ͑SEM͒ is an established technique to measure the diffusion length of minority carriers in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1−xN films

Cremades

Albrecht

Krinke

et al. 2000

Journal of Applied Physics

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Combined electron beam induced current and transmission electron microscopy ͑TEM͒ measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from xϭ0 to xϭ0.79, in order to correlate the electrical and structural properties of the films. The diffusion length of holes in the films ranges between 0.3 and 15.9 m, and the estimated lifetime of holes for doped samples varies between 0.2 ns and 16 s. Different effects contribute to the observed increase in the diffusion length with increasing aluminum content. Among others, dislocations seem to be active as nonradiative recombination sites, and phase separation and decomposition as observed by TEM in Al-rich alloys lead to the formation of a spatially indirect recombination path due to the piezoelectric field in the films. Potential fluctuations associated with these phase irregularities could also give rise to electron induced persistent conductivity contributing to the increase of the diffusion length. From our experimental observations, we conclude that the silicon dopants are partially activated in Al-rich alloys, and do not influence significantly the values of the diffusion length of holes in these samples.

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“…[16][17][18] This route is proving difficult, as the difference in lattice parameters and the strength of the Si-N bond prevent the formation of smooth, single-crystal GaN on Si ͑111͒. 18,19 To some extent this has been alleviated by using a two-step method involving various buffer layers such as SiC, 20,21 AlN, 22,23 GaAs, 24 AlAs, 25 and SiN x . 26 These typically yield smooth morphologies and columnar microstructures with a TD density of 10 10 -10 11 cm −2 -no real advance.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ␥-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si ͑100͒ or Si ͑111͒, reveal a strong room-temperature Z 3 excitonic emission at ϳ387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of ␥-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the ␥-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ϳ380 and ϳ387 nm are mediated by excitonic effects.

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High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Cited by 98 publications

References 13 publications

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1−xN films

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

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