High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

Jiao, S.; Murakami, Yuya; Nagasawa, Hiroyoki; Fukidome, Hirokazu; Makabe, Isao; Tateno, Yasunori; Nakabayashi, Takashi; Suemitsu, Maki

doi:10.4028/www.scientific.net/msf.806.89

Cited by 10 publications

(6 citation statements)

References 31 publications

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“…Several works have been made on the SiC heteroepitaxy on AlN [9][10][11][12][13] and a few others focused also on graphene/SiC/AlN/Si(111) and graphene/SiC/AlN/Si(100) multilayer structures. 14,15) Furthermore, AlN layers have successfully prevented the formation of hollow voids during the SiC or graphene growth. [13][14][15] However, the rough surfaces of the abovementioned multilayers impeded the realization of novel highspeed transistors utilizing graphene with ultrahigh carrier mobility as a channel material.…”

Section: Introductionmentioning

confidence: 99%

“…14,15) Furthermore, AlN layers have successfully prevented the formation of hollow voids during the SiC or graphene growth. [13][14][15] However, the rough surfaces of the abovementioned multilayers impeded the realization of novel highspeed transistors utilizing graphene with ultrahigh carrier mobility as a channel material. [13][14][15] The lattice mismatch between wurtzite AlN(0001) and Si(111) surfaces is ∼19%, 16) which is somewhat smaller than that between 3C-SiC(111) and Si(111) surfaces (∼20%).…”

Section: Introductionmentioning

confidence: 99%

“…[13][14][15] However, the rough surfaces of the abovementioned multilayers impeded the realization of novel highspeed transistors utilizing graphene with ultrahigh carrier mobility as a channel material. [13][14][15] The lattice mismatch between wurtzite AlN(0001) and Si(111) surfaces is ∼19%, 16) which is somewhat smaller than that between 3C-SiC(111) and Si(111) surfaces (∼20%). Nevertheless, the lattice mismatch at the AlN/Si interface remains large, possibly leading to the surface morphology degradation in the AlN intermediate layers and the SiC films thereon.…”

Section: Introductionmentioning

confidence: 99%

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Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Narita¹,

Nara²,

Enta³

et al. 2019

Jpn. J. Appl. Phys.

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A cubic silicon carbide (3C-SiC) film was fabricated by pulsed laser deposition on an aluminum nitride layer grown on an off-axis Si(110) substrate. This is the first report about the use of off-axis Si(110) substrates for manufacturing SiC/AlN/Si multilayers. A high-quality epitaxial 3C-SiC(111) film without rotation domains or twins, as evidenced by reflection high-energy electron diffraction (RHEED) measurements, was successfully obtained by using a wurtzite AlN(0001)/off-axis Si(110) substrate. On this 3C-SiC film, graphene was formed through annealing in ultrahigh vacuum at 1200 °C and its structure and chemical bonding were investigated via in situ RHEED and X-ray photoelectron spectroscopy; the full width at half maximum of the C 1s core level peak and the root-mean-square surface roughness were 0.60 eV and 0.14 nm, respectively, which were substantially lower than those (0.73 eV and 1.44 nm) previously reported for a graphene sample with similar thickness but formed on a SiC/AlN/onaxis Si(110) substrate.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Narita¹,

Nara²,

Enta³

et al. 2019

Jpn. J. Appl. Phys.

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“…Then, a number of works demonstrating the feasibility of graphene synthesis on β-SiC/Si wafers of different orientations have been published . Mostly, these studies have been conducted on β-SiC (111) thin films [51][52][53][54][55][56][57][58][59][60][61][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81] and single-crystalline SiC (111) wafers [62][63][64]. However, some studies have been carried out on β-SiC(001) [50, 61, 82-93, 101, 102] and even on polycrystalline β-SiC substrates [94].…”

Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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“…[10][11][12] It has been reported that AlN immediate layers grown on Si substrates play a critical role in suppressing the Si outdiffusion during the SiC and graphene growth. [13][14][15][16] We have recently conducted the growth of 3C-SiC(111) on a 2H-AlN(0001) intermediate layer on an on-axis Si(110) substrate to form graphene on the SiC/AlN/Si substrate. 17) The use of the AlN intermediate layer proved to eliminate the problem of the formation of voids during the SiC and graphene growth.…”

Section: Introductionmentioning

confidence: 99%

Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate

Nara¹,

Nakazawa²

2019

Jpn. J. Appl. Phys.

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We have formed silicon carbide (SiC) seed layers at various substrate temperatures by ultralow-pressure chemical vapor deposition using monomethylsilane (CH 3 SiH 3 ) on aluminum nitride (AlN) films grown on off-axis Si(110) substrates. After that, we grew SiC films on the seed layers by pulsed laser deposition using a SiC target. We investigated the effects of the seed layers formed at various temperatures on the crystallinity and surface morphology of the SiC films thereon. The SiC films grown on the seed layers tended to have lower surface roughnesses than the film grown directly on the AlN film. The SiC film grown on the seed layer formed at 600 °C on the AlN film had the best crystallinity among the films. The formation of the seed layers had an effect on the relaxation of the internal stress in the SiC films. The SiC film can be used to grow epitaxial graphene by high-temperature annealing, and the AlN layer on Si plays a role in insulating graphene devices from the Si substrate. Therefore, the graphene transistors are one of the possible applications for epitaxial graphene grown on SiC/AlN/Si.

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High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

Cited by 10 publications

References 31 publications

Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate

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