High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells

Meng, Fanying; Liu, Jinning; Shen, Lei; Shi, Jing; Han, Anjun; Zhang, Liping; Liu, Yucheng; Yu, Jian; Zhang, Junkai; Zhou, Rui; Liu, Zhengxin

doi:10.1007/s11708-016-0435-5

Cited by 26 publications

(5 citation statements)

References 13 publications

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“…[114] The latter relates to material usage and is particularly important due to the high sensitivity of SHJ solar cells (and other cell structures where surface-related recombination is minimized) to changes in bulk lifetime, which can be significantly impacted by doping variations across the ingot. [115][116][117] In addition to these intrinsic advantages of p-type c-Si wafers, the adoption of such wafers would further benefit from the cheaper wafer cost, since p-type Cz-Si wafers are currently 8-10% cheaper than their n-type counterparts (for the same wafer size/thickness). [118] Yet, the SHJ solar cell's strict lifetime requirements also apply to p-type wafers.…”

Section: Final Thoughtsmentioning

confidence: 99%

Silicon Heterojunction Solar Cells and p‐type Crystalline Silicon Wafers: A Historical Perspective

et al. 2022

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The first reports of both boron–oxygen (BO)‐related light‐induced degradation (BO‐LID) and amorphous/crystalline silicon heterojunction (SHJ) solar cell fabrication date back to the early 1970s. However, the complete development of the “modern” SHJ structure took place well before BO defect stabilization processes were developed. Due to the susceptibility of p‐type Czochralski (Cz)‐grown silicon to BO‐LID, such wafers were deemed unsuitable for SHJ solar cells. In addition to stability issues, lower charge carrier lifetimes due to contamination and challenges with surface passivation posed barriers to the adoption of p‐type wafers in SHJ applications. Herein, these three key challenges are discussed in detail. Kinetic modeling and experimental results reveal the severe impact of BO‐LID in p‐type SHJ solar cells and provide possible explanations as to why earlier attempts using p‐type wafers might have failed. The role of gettering and advanced hydrogenation in stabilizing BO defects in SHJ solar cells is demonstrated experimentally. Finally, a summary of the effective surface recombination velocities reported in the literature for hydrogenated intrinsic amorphous silicon passivation of p‐ and n‐type crystalline silicon wafers is presented. Based on these findings, the potential of p‐type wafers to enable a next‐generation of high‐efficiency solar cells featuring carrier‐selective contacts is discussed.

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Section: Final Thoughtsmentioning

confidence: 99%

Silicon Heterojunction Solar Cells and p‐type Crystalline Silicon Wafers: A Historical Perspective

et al. 2022

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“…SHJ solar cells consist of thin i=p and i=n a-Si:H stacks deposited by plasma-enhanced chemical vapor deposition (PECVD) on n-type Cz-Si wafers, as described in our previous works. [21][22][23] The thickness of the wafers is roughly 100 µm. Intrinsic a-Si:H layers can passivate the dangling bonds on the surfaces of a Si wafer, and p=n a-Si:H layers with an n-type wafer can construct a PN junction and the back surface field of a solar cell.…”

Section: Effect Of Tco Films On Shj Solar Cellsmentioning

confidence: 99%

Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

Meng

Shi

Shen

et al. 2017

Jpn. J. Appl. Phys.

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Three different dopant indium oxide thin films were fabricated at low temperatures by reactive plasma deposition and sputtering. The optical and electrical characteristics of these films were analyzed as a function of the Hall electron concentration. Furthermore, these films were applied to amorphous/crystalline silicon heterojunction solar cells as transparent electrodes. Consequently, it was demonstrated that the high Hall mobility, high refractive index, and low extinction coefficient of transparent conductive oxide (TCO) films contribute to the high product of short-circuit current density and fill factor and conversion efficiency. Furthermore, it was found that the solar cell with a finger spacing of 1.9 mm on a 125 ' 125 mm 2 Si wafer is highly tolerant to TCO film resistivity when the electron concentration is less than 4.0 ' 10 20 cm %3 .

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“…Achim Kimmerle et al studied the origin of the apparently reduced recombination parameter of highly doped regions [15][16][17]. Other authors have used the measured current-voltage (I-V) characteristics of solar cells in conjunction with computer simulations to obtain the recombination parameters in solar cells under equilibrium conditions [18][19][20][21][22]. However, recently, Andres Cuevas indicated that the reverse saturation current density of a solar cell under illumination differs from that in equilibrium.…”

Section: Introductionmentioning

confidence: 99%

Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

et al. 2020

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In order to maximize performance in all conditions of use, and to model exactly the performance of solar cells, it is very important to study the recombination parameters under different injection levels. In this paper, the recombination parameters and their effect on the output performance of solar cells are investigated under different injection levels for the full-area aluminum back surface field (Al-BSF) solar cell and passivated emitter and rear cell (PERC) solar cell for the first time. It is found that the recombination parameter J01 of the diffusion region and the recombination parameter J02 of the depletion region for the PERC solar cell are smaller than those of the Al-BSF solar cell under the same injection level. A new finding is that the recombination parameter J01 of Al-BSF solar cells increases quickly with the decreasing injection level compared with PERC solar cells. Finally, the J01/J02 of Al-BSF and PERC solar cells is investigated, and the effects of J01/J02 on the electrical parameters are also analyzed for Al-BSF and PERC solar cells under different injection levels. The obtained conclusions not only clarify the relationship between the recombination parameters and injection levels, but also help to improve cell processes and accurately model daily energy production.

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells

Cited by 26 publications

References 13 publications

Silicon Heterojunction Solar Cells and p‐type Crystalline Silicon Wafers: A Historical Perspective

Silicon Heterojunction Solar Cells and p‐type Crystalline Silicon Wafers: A Historical Perspective

Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

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