2010
DOI: 10.1016/j.jcrysgro.2010.05.011
|View full text |Cite
|
Sign up to set email alerts
|

High quality Mg2Sn crystals prepared by RF induction melting

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
19
0

Year Published

2010
2010
2019
2019

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 31 publications
(22 citation statements)
references
References 20 publications
3
19
0
Order By: Relevance
“…All doped films show positive Seebeck coefficients, while those of undoped films are negative, in good agreement with those results already reported for bulk materials [20,21]. Observation of a positive Seebeck coefficient for doped films corroborates well with their positive Hall voltages as revealed by Hall effect measurements and thus validates the role of Ag impurity as p-dopant.…”
Section: Thermoelectric Performance Of Thin Filmssupporting
confidence: 90%
See 2 more Smart Citations
“…All doped films show positive Seebeck coefficients, while those of undoped films are negative, in good agreement with those results already reported for bulk materials [20,21]. Observation of a positive Seebeck coefficient for doped films corroborates well with their positive Hall voltages as revealed by Hall effect measurements and thus validates the role of Ag impurity as p-dopant.…”
Section: Thermoelectric Performance Of Thin Filmssupporting
confidence: 90%
“…The values of electrical conductivity and Seebeck coefficient for both doped and undoped stoichiometric Mg2Sn films (i.e. films deposited with Ag-doped Sn targets or pure Sn targets biased at −250 V) are in good agreement with reported results for Ag-doped and undoped bulk polycrystalline Mg2Sn [20,21]. In fact, for the target-substrate distance of 120 mm, film with stoichiometric Mg2Sn shows the highest power factor, which is ∼4.35 × 10 −3 W K −2 m −1 .…”
Section: Thermoelectric Performance Of Thin Filmssupporting
confidence: 88%
See 1 more Smart Citation
“…Adding too much excess Mg leads to the formation of a MgþMg 2 Sn eutectic phase, while too little excess Mg leads to the formation of a Sn þ Mg 2 Sn eutectic phase. 10 This precludes us from using adjustments in the Mg/Sn ratio to try to force the Ag atoms onto one lattice site or the other. To be consistent, we label our samples (Mg 1-y Ag y ) 2 Sn or (Mg 1-y Ag y ) 2 Sn 1-x Si x as if the Ag was substituting for Mg, a fact we will justify a posteriori.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Ag-doped p-type Mg 2 Sn material has been studied by Savvides and co-workers. 10 Ag is also an acceptor in Mg 2 Si. 11 Isoda et al 12 studied double-doping Mg 2 Sn 0.75 Si 0.25 with Ag and Li and prepared their samples by liquid solid reaction followed by hot pressing.…”
Section: Introductionmentioning
confidence: 99%