High-quality nanothickness single-crystal Sc2O3 film grown on Si(111)

Abstract

High-quality single-crystal Sc 2 O 3 films a few nanometer thick have been grown epitaxially on Si ͑111͒ despite a huge lattice mismatch. The films were electron-beam evaporated from a Sc 2 O 3 target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of 0.06 nm. The films are well aligned with the Si substrate with an orientation relationship of Si͑111͒ ʈ Sc 2 O 3 ͑111͒, and an in-plane expitaxy of Si͓110͔ ʈ Sc 2 O 3 ͓101͔.

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

“…1(c)), showing that the oxide surface is atomically smooth and ordered. The (3 Â 3) reconstructed pattern is different from the (4 Â 4) displayed in cubic single-crystal Sc 2 O 3 [22], Y 2 O 3 [23], or 5 Â in cubic Gd 2 O 3 [24] on Si(111).…”

MBE grown high-quality Gd2O3/Si(111) hetero-structure

“…The full-width at half-maximum of Si{2 2 0} reflections is about 0.00911 and of Gd 2 O 3 {4 4 0} is 0.0791, indicating an excellent in-plane epitaxy. In contrast to a six-fold symmetry of an HCP structure found in the growth of Gd 2 O 3 on sapphire or GaN [8,9], the three-fold symmetry in this work is similar to that of the epitaxial growth of Sc 2 O 3 on Si(1 1 1) [7,10].…”

Growth and structural characteristics of GaN∕AlN/nanothick γ-Al2O3∕Si (111)

“…10 The Si surface was further cleaned with heating the wafers to temperatures above ϳ700°C, resulting in a sharp, streaky ͑7 ϫ 7͒ reconstructed RHEED pattern with Kikuchi arcs, indicative of the attainment of a clean surface of Si ͑111͒ substrate. 11 The thin ␥-Al 2 O 3 films were then deposited on the reconstructed Si surface with electron beam evaporaa͒ Author to whom correspondence should be addressed. tion from a high-purity sapphire target.…”