High Quality RF‐Sputtered Silicon Dioxide Layers

Abstract

Very homogeneous SiO2 layers were prepared by rf sputtering of SiO2 in Ar or Si in O2 with Ar on Si substrates which had been cleaned in situ by sputter etching. After a short anneal in N2 (20 min at 1050°C and a 10 min postmetallization anneal at 500°C), surface charge, surface‐state density, and stability were similar to those reported for good, thermally grown oxides. Best results were obtained with reactively sputtered SiO2 .

Positive Voltage Shift in C‐V Curves by a Combination Oxide of Dry SiO2 and Sputtered SiO2

“…2 that the C-V curve for p-type silicon having the combination oxide exhibits a lower flatband voltage of -5V in comparison to -13.5V of dry oxide. It may be mentioned here that growth of dry SiO2 on silicon always produces positive fixed charges at the interface and so does the sputtered SiO2 (9). 3 depicting a lower flatband voltage of -1.0V for the combination oxide in comparison to -7V for the dry oxide.…”

“…The voltage shift of the C-V curve containing the combination oxide is compared with the C-V curve of dry oxide and corresponding ideal C-V curve (where Qe = 0 and ~m~ = 0). Second, it is well known that the structure of sputtered SiO2 is less homogeneous compared to dry SiO2 (1)(2)(3)(4)9). 2 that the C-V curve for p-type silicon having the combination oxide exhibits a lower flatband voltage of -5V in comparison to -13.5V of dry oxide.…”

Improving the gas barrier property of SiOx:C thin films deposited by RF magnetron sputtering

“…Silicon oxide films are excellent candidates for various applications, including protective anti-scratch coatings on plastic substrates, transparent barrier films for microelectronics and protective layers against corrosion [7][8][9][10]. Such several deposition techniques as electron beam deposition [1,2], sputtering [11,12], atomic layer deposition (ALD) [13][14][15] and plasma-enhanced chemical vapor deposition (PECVD) [11,16,17] have been utilized to produce silicon oxide films on a variety of substrates. Plasma polymerization is one of the best methods and the organic monomer precursors are introduced into chamber where they are polymerized by plasma to deposit barrier films on polymer substrates [18][19][20].…”

Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides

“…Therefore, it is expected that it can affect not only the quality of the gate oxide, 5,6 but also its reliability which becomes a critical factor for device operation. Except for sputtered silicon oxide instability due to sodium, 8 the reliability issue has not been approached until our recent attempt. 9,10 In the study of sputtered oxide stability 9,10 the effect of oxide annealing temperature was not investigated.…”