High reliability InGaP/GaAs HBT

Pan, N.; Elliott, J.; Knowles, Matthew; Vu, D.P.; Kishimoto, Katsuhiro; Twynam, J.K.; Sato, H.; Fresina, M.T.; Stillman, G. E.

doi:10.1109/55.663532

Cited by 72 publications

(17 citation statements)

References 5 publications

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“…Furthermore, an InGaP passivation ledge process led to the long-term reliability in InGaP/GaAs HBTs. 3,4 However, the mechanism of such passivation effects is not fully understood. In addition, a variety of surface atomic arrangements of InGaP due to the well-known sublattice ordering effects [5][6][7] make the control of surfaces and heterointerfaces rather complicated and difficult.…”

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confidence: 99%

Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Hashizume

2002

Applied Physics Letters

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Electronic properties of ''free'' n-In 0.49 Ga 0.51 P surfaces grown by metalorganic vapor-phase epitaxy were directly characterized using the contactless capacitance-voltage technique. The HCl-treated surface showed a wide and continuous distribution of surface state density (D ss ) in energy with relatively low densities, leading to no pronounced Fermi-level pinning effect on the surface. The minimum D ss value was determined to be 8ϫ10 11 cm Ϫ2 eV Ϫ1 . The surface Fermi-level position was found at 1.2 eV above the valence band maximum, consistent with the x-ray photoelectron spectroscopy results.

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confidence: 99%

Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Hashizume

2002

Applied Physics Letters

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“…These advantages include low surface recombination velocity, large valence band offset between InGaP and GaAs, high etch selectivity, having no DX center problem (which occurs in aluminum containing compounds such as Al Ga As), and superior long-term reliability [1]- [4]. High dc current gain in HBT devices is extremely attractive because of the increased current drive capability and lower noise figure.…”

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confidence: 99%

Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs

Chung

Bank

Epple

et al. 2001

IEEE Trans. Electron Devices

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“…krT Itf8h= ln Ahis + k Tj (3) (4) where all terms have been previously defined. The parameters were estimated subject to the constraint, In A In A +E,w -E,,,,,.. high (5) where T.,,d is the critical junction temperature at which the transition occurs.…”

Section: A Separafinggroups A-low and A-highmentioning

confidence: 99%

“…The reliability of HBTs with InGaP emiitters has been studied over the past several years by many authors [1][2][3][4][5][6][7][8]. The reported MTTF (median time to failure) has varied over a wide range, from <107 to 3 x io9 hr.s at 125 0C [1,5].…”

Section: I Introductionmentioning

confidence: 99%

Reliability results of HBTs with an InGaP emitter

Whitman

2005

[Reliability of Compound Semiconductors] ROCS Workshop, 2005.

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0183 cwhitman@rfmd com 1. Abstract Accelerated lifetest results are presented on HBTs with InGaP emitters. The data from this experiment are analyzed in several ways. An Arrhenius plot indicates the existence of a tempemture dependent activation energy, E. A low Ea mechanism dominates above Tj 380°C and a high Ea mechanism dominates at lower temperature. The critical transition temperature between regimes is determined using the method of maximum likelihood. The difference in Ea's between low and high temperature regimes is statistically significant.The HBTs are divided into two groups, A and B. Group A contains a total of 116 devices from II wafer lots. The analysis suggests further splitting group A into high and low temperature subgroups.The A-high H-BTs are run stressed at Tj's of 379, 391 and 413 OC and A-low devices are tested at Tj's of 312, 355 and 367 OC. Group B is composed of HBTs from 7 lots from an earlier qualification and are stressed at Tj of285, 305 and 325 OC.A comparison is made between estimates from degradation measurements performed at temperature vs. 40°C for group A-low. No significant difference is observed indicating that beta degradation can be monitored at temperature only and cooling to low temperature is not necessary. Further, the predictions from group A-low and group B data are found to be in good agreement indicating that very high junction temperatures can still provide good estimates of lower temperature behavior.By the method of maximum likelihood, the group A-low data predicts a MTTF at T-= 125°C of 7.6 x 109 hours with 95% CBs of [6.4 x 108, 8.9 x I o'1. Given the typical industry standard of I x 1 06 hours, the reliability requirements are easily met.It is suggested that the standard of lx 106 hours does not adequately take failure time variation into account and that a better specification is in terms of FITs (fails in time). The 20 year average FIT rate at 125 IC is found to be negligible. Assuming a much higher junction temperature of 200 IC, the average failure rate climbs to 0.65 FITs with an upper 95% confidence bound of-6 FITs.

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High reliability InGaP/GaAs HBT

Cited by 72 publications

References 5 publications

Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs

Reliability results of HBTs with an InGaP emitter

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