High-resistivity polycrystalline silicon as RF substrate in wafer-level packaging

Abstract

High-resistivity polycrystalline silicon (HRPS) is presented as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging and integrated passive networks. A record quality factor (Q ¼ 11; 1 GHz; 34 nH) and very low loss (0.65 dB=cm; 17 GHz) are demonstrated for inductors and coplanar waveguides, respectively, on HRPS.

Wireless microsystems for biomedical applications

“…The photograph on left part of the Figure 2(c) shows few prototypes of fabricated antennas suspended in the cavity of the packaging [9]. This last technique is especially suitable for integrating patch-antennas (due to their planar shape) with RF chips [10]. A variety of antennas with a variety of shapes and physical placement are related in the literature, as it is the work done by Soontornpipit et al [11] who fabricated implantable patch antennas with spiral and serpentine shapes.…”

Super-regenerative receiver at 433 MHz

“…Finally, the technique that seems to be promising is the on-wafer because wafer-level-packaging (WLP) techniques for joining heterogeneous technologies are offered by the industry with a relatively low-price. This last technique is especially suitable for integrating patch-antennas that are easy to package with the RF chips (due to their planar shape) [9]. A variety of antennas with a variety of shapes and physical placement are related in the literature, as it is in the work done by Soontornpipit et al [10] who fabricated implantable patch antennas with spiral and serpentine shapes.…”

Hybrid integration of 4‐W and 8‐W S‐band GaN power amplifiers on a selectively anodized aluminum substrate

“…Its potential has been demonstrated in various ways by many researchers in the last decade [1–4]. Although GaN devices are being actively studied, low‐cost and high‐quality RF substrates such as an oxidized Si wafer or organic substrate have received much interest from many researchers who wanted to implement large‐size passive devices on a low‐cost alternative substrate instead of an expensive gallium arsenide (GaAs) or lossy Si wafer [5–7]. Recently, a new RF substrate manufacturing technology that makes a thick anodized aluminum oxide layer (Al 2 O 3 ) on a very cheap aluminum metal plate was introduced for microwave power module packaging [8].…”