High-resistivity SiGe BiCMOS technology development

Abstract

IBM first qualified a 0.35µ µ µ µm generation 1000 Ω Ω Ω Ω-cm high resistivity substrate (HiRES) SiGe BiCMOS technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf frontend-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Ω Ω Ω Ω-cm, 1 st generation HiRES, and 2 nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed. Index Terms -High-resistivity substrate, SiGe BiCMOS, front-end-IC, switch, PA, LNA.