High-resolution depth profiling in ultrathin Al2O3 films on Si

Gusev, Evgeni; Copel, M.; Cartier, E.; Baumvol, I. J. R.; Krug, Cristiano; Gribelyuk, M.

doi:10.1063/1.125694

Cited by 406 publications

(208 citation statements)

References 12 publications

Supporting

Mentioning

204

Contrasting

Order By: Relevance

“…3 4 using the narrow ͑⌫ =40 eV͒ resonance in the 27 Al͑p , ␥͒ 28 Si nuclear reaction cross section curve at 404.9 keV, whose excitation curve and the resulting 27 Al profile are shown in Fig. 3͑a͒.…”

Section: -mentioning

confidence: 99%

“…[3][4][5] A good tradeoff between the characteristics of these two materials 1, [6][7][8][9][10][11] can be achieved by forming ͑HfO 2 ͒ x ͑Al 2 O 3 ͒ 1−x mixed oxides, either homogeneous in composition or in nanolaminated structures. A convenient approach for depositing such films ͑oxides and mixed oxides͒ is the atomic layer deposition ͑ALD͒ technique, where self-saturating surface chemical reactions are employed.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

et al. 2005

Self Cite

View full text Add to dashboard Cite

Section: -mentioning

confidence: 99%

mentioning

confidence: 99%

Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

et al. 2005

Self Cite

View full text Add to dashboard Cite

“…It is suggested that the amorphous Al 2 O 3 phase becomes metastable with respect to a crystalline alumina polymorph, due the nanometer size scale of the film/substrate combination. Since some of the uses for ALD Al 2 O 3 films include gate oxide for electronics, 3,4 protective barriers, 5 as well as potential coatings in energy materials, [6][7][8][9][10] it is critical to characterize these coatings on the nanoscale. For example, in the case of energy materials, there are recent reports of enhanced stability and extended cycling of Li-ion battery nanomaterials coated with ALD Al 2 O 3 thin films, [6][7][8][9][10] 9 This work assumes that the Al 2 O 3 coating is amorphous, as would be expected.…”

mentioning

confidence: 99%

Growth of crystalline Al2O3 via thermal atomic layer deposition: Nanomaterial phase stabilization

2014

View full text Add to dashboard Cite

We report the growth of crystalline Al2O3 thin films deposited by thermal Atomic Layer Deposition (ALD) at 200 °C, which up to now has always resulted in the amorphous phase. The 5 nm thick films were deposited on Ga2O3, ZnO, and Si nanowire substrates 100 nm or less in diameter. The crystalline nature of the Al2O3 thin film coating was confirmed using Transmission Electron Microscopy (TEM), including high-resolution TEM lattice imaging, selected area diffraction, and energy filtered TEM. Al2O3 coatings on nanowires with diameters of 10 nm or less formed a fully crystalline phase, while those with diameters in the 20–25 nm range resulted in a partially crystalline coating, and those with diameters in excess of 50 nm were fully amorphous. We suggest that the amorphous Al2O3 phase becomes metastable with respect to a crystalline alumina polymorph, due to the nanometer size scale of the film/substrate combination. Since ALD Al2O3 films are widely used as protective barriers, dielectric layers, as well as potential coatings in energy materials, these findings may have important implications.

show abstract

“…5 The deposition of semiconductor device grade films of Al 2 O 3 and HfO 2 on Si is well established. 6,7 However, prior work on using noble metal nanoparticles to increase dielectric constants has focused primarily on polymer and glass dielectrics and processes that are not readily compatible with current integrated circuit fabrication. [8][9][10] Conversely, studies utilizing techniques similar to that used here have not focused explicitly on permittivity enhancement or dielectric properties.…”

mentioning

confidence: 99%

Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles

Ravindran

Gangopadhyay

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Multilayer reactive electron-beam evaporation of thin aluminum oxide layers with embedded silver nanoparticles ͑Ag-nps͒ has been used to create a dielectric thin film with an enhanced permittivity. The results show a frequency dependent increase of the dielectric constant . Overall stack of the control sample was found to be 7.7-7.4 in the 1 kHz-1 MHz range. This is in comparison with = 16.7-13.0 over the same frequency range in the sample with Ag-nps. ideally suited for use with n-and p-type Si over a range of doping levels. The drawback is that the intermediate dielectric constant of Al 2 O 3 limits the capacitance density compared with other high-dielectrics. It is worth noting at this point that the permittivity of metal nanoparticles has been theorized to be superior to that predicted by the classical electrostatic model. 4 This is explained considering the dipole behavior of nonspherical nanoparticles dispersed in a medium. Each nanoparticle dipole is recognized as behaving like a basic harmonic oscillator or dipole with a relaxation frequency. 5 The deposition of semiconductor device grade films of Al 2 O 3 and HfO 2 on Si is well established. 6,7 However, prior work on using noble metal nanoparticles to increase dielectric constants has focused primarily on polymer and glass dielectrics and processes that are not readily compatible with current integrated circuit fabrication. [8][9][10] Conversely, studies utilizing techniques similar to that used here have not focused explicitly on permittivity enhancement or dielectric properties. 11 The primary differences between the work presented here and earlier works on permittivity enhancement with nanoparticles are the manner in which the silver nanoparticles ͑Ag-nps͒ are deposited, the dielectric medium into which they dispersed, and the deposition and characterization of the film on Si substrates.A control set without Ag-nps and an experimental set with Ag-nps were fabricated. In each set, samples were prepared on both p-and p + -Si ͑100͒ with resistivities of 1-10 and 0.0030-0.00 70 ⍀ cm, respectively. The Si substrates were first cleaned with a modified Shiraki process to remove the native oxide and provide a clean, hydrogen passivated surface. 12,13 After drying under nitrogen, they were immediately transferred to a Kurt J. Lesker AXXIS e-beam evaporation system. From a base pressure of 5 ϫ 10 −7 torr, the substrates were heated to 50°C and oxygen was introduced at 5 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒ and 5 ϫ 10 −5 torr. For control samples without silver, 8.73± 0.08 nm of Al 2 O 3 was then evaporated at 0.5 Å / s. For samples with incorporated Ag-nps, Al 2 O 3 , approximately 3 nm in thickness, was deposited and the chamber was again pumped down to 5 ϫ 10 −7 torr. An ultrathin layer of Ag-nps, about half a nanometer in nominal thickness, was deposited under high vacuum. Oxygen was reintroduced, and approximately 3 nm of Al 2 O 3 was again evaporated. This process was repeated until the film consisted of three layers of Al 2 O 3 with tw...

show abstract

High-resolution depth profiling in ultrathin Al2O3 films on Si

Cited by 406 publications

References 12 publications

Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Growth of crystalline Al2O3 via thermal atomic layer deposition: Nanomaterial phase stabilization

Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles

Contact Info

Product

Resources

About