High-resolution EUV microstepper tool for resist testing and technology evaluation

Brunton, Adam N.; Cashmore, Julian S.; Elbourn, P.; Elliner, G.; Gower, Malcolm C.; Grünewald, P; Harman, M.; Hough, S.; McEntee, N.; Mundair, S.; Rees, D.; Richards, P.; Truffert, V.; Wallhead, Ian; Whitfield, Mike

doi:10.1117/12.548343

Cited by 9 publications

(4 citation statements)

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“…The MET is a microfield ͑600 m ϫ 600 m͒ 0.3 NA, two mirror lithography exposure tool made by Exitech, Ltd. 7,8 with resolution down to 30 nm. The MET is a microfield ͑600 m ϫ 600 m͒ 0.3 NA, two mirror lithography exposure tool made by Exitech, Ltd. 7,8 with resolution down to 30 nm.…”

Section: Experimental Results From the Intel Metmentioning

confidence: 99%

Lithographic flare measurements of Intel’s microexposure tool optics

Chandhok

Lee

Roberts

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inResist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic J. Vac. Sci. Technol. B 24, 326 (2006); 10.1116/1.2162578 Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic Measurements of flare as a function of feature size, pitch, and orientation have been made on Intel's extreme ultraviolet microexposure tool ͑MET͒ using a high sensitivity photoresist. The high sensitivity photoresist does not cross-link at the high doses required to measure flare. The predicted value for intrinsic flare for the MET from mid-spatial frequency roughness ͑MSFR͒ of mirror surfaces is 3.5%. After addition of the contribution to flare from high order aberrations to that from MSFR, the modeled value is in excellent agreement with the measured flare for the 1 m line of 4%. The measured flare in the horizontal direction is 5% and is higher than the flare in the vertical direction. The point spread function due to scatter has been computed and the modulation transfer function of the system as a function of pitch has also been measured.

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Section: Experimental Results From the Intel Metmentioning

confidence: 99%

Lithographic flare measurements of Intel’s microexposure tool optics

Chandhok

Lee

Roberts

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Nevertheless, diffractionlimited high-numerical-aperture (NA) optics (larger than 0.2) remain a concern. The highest-NA EUV optics available to date are the 0.3 NA Micro-Exposure Tool (MET) optics used in an experimental exposure station at the Lawrence Berkeley National Laboratory (LBNL), Berkeley, California, 2,3 as well as commercial microfield EUV tools 4 used at at Intel and Sematech. Although interferometric measurements, both EUV and visible, have indicated diffraction-limited performance from these optics, lithographic verification of such performance has yet to be definitively demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator

2006

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Extreme-ultraviolet (EUV) lithography remains a leading contender for use in the mass production of nanoelectronics at the 32 nm node. Great progress has been made in all areas of EUV lithography, including the crucial issue of fabrication of diffraction-limited optics. To gain an accurate understanding of the projection optic wavefront error in a completed lithography tool requires lithography-based aberration measurements; however, making such measurements in EUV systems can be challenging. We describe the quantitative lithographic measurement of spherical aberration in a 0.3 numerical aperture. EUV microfield optic. The measurement method is based on use of the unique properties of a programmable coherence illuminator. The results show the optic to have 1 nm rms spherical error, whereas interferometric measurements performed during the alignment of the optic indicated a spherical error of less than 0.1 nm rms.

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“…This is a natural progression and the MET3 itself was conceived when the earlier small field, 0.1 NA 10X Schwarzschild systems in use began to reach the end of their useful lives [5]. The main difference this time is that in addition to having sub-16 nm patterning expectations, the MET5 design would also have to be compatible with the existing MET3 platforms [6].…”

Section: Design Constraints and Requirementsmentioning

confidence: 99%

Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5

Glatzel

Ashworth²,

Bremer

et al. 2013

SPIE Proceedings

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In support of the Extreme Ultraviolet Lithography (EUVL) roadmap, a SEMATECH †/CNSE ‡ joint program is under way to develop 13.5 nm R&D photolithography tools with small fields (micro-field exposure tools [METs]) and numerical apertures (NAs) of 0.5. The transmitted wavefront error of the two-mirror optical projection module (projection optics box [POB]) is specified to less than 1 nm root mean square (RMS) over its 30 µm × 200 µm image field. Not accounting for scatter and flare losses, its Strehl ratio computes to 82%. Previously reported lithography modeling on this system [1] predicted a resolution of 11 nm with a k-factor of 0.41 and a resolution of 8 nm with extreme dipole illumination. The POB's magnification (5X), track length, and mechanical interfaces match the currently installed 0.3 NA POBs [2] [3] [6], so that significant changes to the current tool platforms and other adjacent modules will not be necessary. The distance between the reticle stage and the secondary mirror had to be significantly increased to make space available for the upgraded 0.5 NA illumination modules [1].This manuscript discusses the on-going efforts to develop and fabricate this optical projection module.

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High-resolution EUV microstepper tool for resist testing and technology evaluation

Cited by 9 publications

References 0 publications

Lithographic flare measurements of Intel’s microexposure tool optics

Lithographic flare measurements of Intel’s microexposure tool optics

Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator

Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5

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