High-resolution focused ion beam lithography

Matsui, Shinji; Kojima, Yoshinori; Ochiai, Yukinori

doi:10.1063/1.100098

Cited by 43 publications

(28 citation statements)

References 9 publications

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“…It was found that these noria derivatives have high photoreactivity and produce clear line and space patterns with resolutions of 50-70 nm using an EB exposure tool and 26 nm using an EUV exposure tool [15][16][17][18][19][20][21][22][23]. Moreover, we clarified that the sensitivity of the resist materials was consistent with the structure of the cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar [5]arene [24].…”

Section: Introductionmentioning

confidence: 50%

“…Nanolithography technologies have been widely used below the 100 nm node scale, including the 193 nm immersion, electron beam (EB) [1,2], extreme ultraviolet (EUV, 13.5 nm), nanoimprint methods [3,4], and focused ion beam (FIB) lithography [5]. Among these technologies, EUV lithography is one of the most promising nanolithographic technologies for advanced devices to achieve less than 16 nm nodes [6][7][8] and is a potential future lithographic technology for high-volume manufacturing in the microelectronics industry.…”

Section: Introductionmentioning

confidence: 99%

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Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

Yamamoto

Kudo

Kozawa

2017

J. Photopol. Sci. Technol.

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The requirements for next generation resist materials in extreme ultraviolet (EUV) lithography are very challenging. Therefore, the development of new resist materials has been expected to meet strict requirements. Molecular resists are promising resists owing to the small size of their building blocks. In this study, we examined lithographic performances, such as sensitivity and patterning, using noria derivative (noria-CHVEs, Resists 1-3) under EUV and a 75 keV electron beam (EB) exposure system. In particular, the effect of the protection ratio on the lithographic performances was studied by changing the protection ratio. The sensitivities of noria-CHVEs showed high values in the range between 1.8 and 3.0 mJ/cm 2 . Resist 2 could provide a resist pattern with a higher resolution than Resists 1 and Resist 3, i.e., a semi-isolated pattern with a line width of 30 nm (pitch: 100 nm). These results indicate that the synthesized noria-CHVEs are promising EUV resist materials.

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Section: Introductionmentioning

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

Yamamoto

Kudo

Kozawa

2017

J. Photopol. Sci. Technol.

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“…Because FIB patterning saves process steps and time, it can be exploited to develop prototypes of both electrical and optical devices [7]- [11]. Direct milling on the surface [12]- [16], sputtering on a polymer layer [17]- [21], and deposition of metal using a high-energy Ga-FIB [22] can generate nanoscale patterns. Furthermore, locally modifying the GaAs surface using FIB bombardment can be applied to the selective growth of InGaAs/InP on GaAs substrate by hydride vapor phase epitaxy technique [23], [24].…”

mentioning

confidence: 99%

Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

Kim

Danner²,

Raftery

et al. 2005

IEEE J. Select. Topics Quantum Electron.

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Abstract-Recent photonic device structures, including distributed Bragg reflectors (DBRs), one-dimensional (1-D) or twodimensional (2-D) photonic crystals, and surface plasmon devices, often require nanoscale lithography techniques for their device fabrication. Focused ion beam (FIB) etching has been used as a nanolithographic tool for the creation of these nanostructures. We report the use of FIB etching as a lithographic tool that enables sub-100-nm resolution. The FIB patterning of nanoscale holes on an epitaxially grown GaAs layer is characterized. To eliminate redeposition of sputtered materials during FIB patterning, we have developed a process using a dielectric mask and subsequent dry etching. This approach creates patterns with vertical and smooth sidewalls. A thin titanium layer can be deposited on the dielectric layer to avoid surface charging effects during the FIB process. This FIB nanopatterning technique can be applied to fabricate optoelectronic devices, and we show examples of 1-D gratings in optical fibers for sensing applications, photonic crystal vertical cavity lasers, and photonic crystal defect lasers. Index Terms-Focused ion beam (FIB), lithography, photonic crystal, vertical cavity surface-emitting laser (VCSEL).

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“…The regions where the silicon-containing resist layer remains are oxidised during the dry development, thus forming a silicon dioxide mask which protects the lower resist layer and results in positive image formation. Such FIB bilayer resist schemes are capable of achieving nanometer resolution while maintaining high aspect pattern ratio [6,7]. The only one drawback is the use of wet development step, which often results.…”

Section: B Resistpatterning With Wet Developmentmentioning

confidence: 99%

“…It was reported that the dose needed to expose most resists by ions is about two orders of magnitude lower than for electrons [ I ] . The As a solution to this problem, the bilayer resist schemes for FIB lithography have been developed [5,6,7]. These schemes generally utilise a thin silicon-containing resist layer over a thick planarising layer.…”

Section: B Resistpatterning With Wet Developmentmentioning

confidence: 99%

Focused ion beam lithography-overview and new approaches

Arshak

Mihov

Arshak

et al.

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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Al~snncl -Focused Ion Beam (FIB) lithography has significant advantages over the electron beam counterpart in terms of resist sensitivity, backscattering and proximity effects. Applying the Top Surface Imaging (TSI) principal to FIB lithography could further enhance its capability. In this paper we review different FIB lithography processes which utilise both wet and dry development. As of further development of this technology, we report a novel lithography process which combines focused Cia' ion beam (Cia' FIB) exposure, silylation and oxygen dry etching. The Negative Resist Image by D q Etching (NERIME) is a TSI scheme for DNQhovolak based ICS~SIS and can result in either positive or negative resist images depending on the extent of the ion beam exposure dose. The NERlMF process can resolve nanometer resist patterns as small as 30nm yet maintaining high aspect ratio of up to 15. The proposed lithography scheme could be utilised for advanced prototype IC's fabrication and critical CMOS lithography process steps.

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High-resolution focused ion beam lithography

Abstract: Articles you may be interested inHigh-resolution three-dimensional reconstruction: A combined scanning electron microscope and focused ionbeam approach Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability J.

Cited by 43 publications

References 9 publications

Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

Focused ion beam lithography-overview and new approaches

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