2003
DOI: 10.1007/978-1-4615-0765-9
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High Resolution Focused Ion Beams: FIB and its Applications

Abstract: Springer Science+Business Media, LLC Library of Congress CataJoging-in-Publication DataHigb resolution focused ion beams: FIB and its applications/Jon Orloff, Lynwood W. Swanson, M. Utlaut.p. cm. Includes bibliographical references and index. ISBN 978-1-4613-5229-7 ISBN 978-1-4615-0765-9 (eBook)

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Cited by 290 publications
(224 citation statements)
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References 87 publications
(125 reference statements)
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“…By using current state-of-the art step-and-repeat exposure tools it is possible, for example, to achieve a minimum transistor gate length of 20 nm and a dynamic random access memory (DRAM) periodicity (half-pitch) of 50 nm [5]. Scanning beams of high-energy particles comprising atoms, ions, and electrons also have evolved into robust and mature technologies which are being used for micro-and nanofabrication purposes [6,7]. Each of these techniques can create arbitrary features at very high resolution (e.g., 5 nm and below), but their serial nature limits the scope of applications to selected, low-volume fabrication tasks.…”
Section: Introductionmentioning
confidence: 99%
“…By using current state-of-the art step-and-repeat exposure tools it is possible, for example, to achieve a minimum transistor gate length of 20 nm and a dynamic random access memory (DRAM) periodicity (half-pitch) of 50 nm [5]. Scanning beams of high-energy particles comprising atoms, ions, and electrons also have evolved into robust and mature technologies which are being used for micro-and nanofabrication purposes [6,7]. Each of these techniques can create arbitrary features at very high resolution (e.g., 5 nm and below), but their serial nature limits the scope of applications to selected, low-volume fabrication tasks.…”
Section: Introductionmentioning
confidence: 99%
“…The collisions between the large primary ions and the substrate atoms cause surface alterations at various levels depending on dosage, overlap, dwell time, and many other variables, in a way that electrons cannot achieve [3]. The properties of the FIB system give it a unique ability to isolate a specific region of the sample, so as to only make necessary modifications without undermining the integrity of the entire sample.…”
Section: Principles and Practice Of The Focused Ion Beam Systemmentioning
confidence: 99%
“…In traditional semiconductor fabrication, ions are allowed to bombard the entire wafer, and regions which are not to be implanted are covered by a patterned film, or mask [3]. With the FIB, whose level of localized control and specificity has already been discussed, we now can discard the mask and simply aim the beam at the areas where implantation is desired.…”
Section: Implantationmentioning
confidence: 99%
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“…Normally undesired effects of sample modification during measurements can be used advantageously for several applications. For example, electron beams are widely applied for lithography [22], while intensive ion beams in FIB are effectively used for microand submicrometer-machining or even for material deposition [23]. FIB usually operates with heavy Ga + ions which makes FIB imaging damaging, but effective for massive material removal.…”
Section: Motivationmentioning
confidence: 99%