High-resolution spectroscopy of silver-doped silicon

Olajos, Janos; Kleverman, Mats; Grimmeiss, H. G.

doi:10.1103/physrevb.38.10633

Cited by 36 publications

(19 citation statements)

References 14 publications

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“…Here we restrict the discussion to the bound states of impurities. Fano resonances have been reported for shallow and deep donor and acceptor impurities in Si, [14][15][16][17][18][19][20][21][22][23][24] donors 25 and acceptors 26 in Ge, Mn in GaAs, 27 and Li in ZnSe. 28 The Fano function F͑ , q͒ = ͑q + ͒ 2 / ͑1+ 2 ͒ involves the shape parameter q and the dimensionless reduced energy…”

Section: Methodsmentioning

confidence: 99%

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

Lewis

Wang

2005

Phys. Rev. B

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Far-infrared absorption spectroscopy in magnetic fields of up to 30 T of the zinc acceptor impurity in indium phosphide has revealed for the first time a series of free-hole transitions ͑Landau-related series͒ in addition to the familiar bound-hole transitions ͑Lyman series͒ as well as hitherto unobserved phonon replicas of both series. Analysis of these data permits the simultaneous direct experimental determination of ͑i͒ the hole effective mass, ͑ii͒ the species-specific binding energy of the acceptor impurity, ͑iii͒ the absolute energy levels of the acceptor excited states of both odd and even parity, ͑iv͒ more reliable, and in some cases the only, g factors for acceptor states, through relaxation of the selection rules for phonon replicas, and ͑v͒ the LO phonon energy. The method is applicable to other semiconductors and may lead to the reappraisal of their physical parameters.

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Section: Methodsmentioning

confidence: 99%

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

Lewis

Wang

2005

Phys. Rev. B

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“…1, has been reported frequently. [11][12][13][14][15][16][17][18][19][20] Isotope doping has confirmed the presence of Ag in the center. 19 It has been established that the three zerophonon lines ''A'' at 778.9 meV, ''B'' at 779.9 meV, and ''C'' at 784.4 meV are transitions to the same ground state.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of a silver-related defect in silicon

et al. 2003

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Optical properties of a silver-related defect in siliconDavies, G.; Gregorkiewicz, T.; Zafar Iqbal, M.; Kleverman, M.; Lightowlers, E.C.; Vinh, N.Q.; Zhu, M. Published in:Physical Review B Link to publication Citation for published version (APA):Davies, G., Gregorkiewicz, T., Zafar Iqbal, M., Kleverman, M., Lightowlers, E. C., Vinh, N. Q., & Zhu, M. (2003). Optical properties of a silver-related defect in silicon. Physical Review B, 67, 235111-1-235111-10. General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Download date: 09 May 2018Optical properties of a silver-related defect in silicon Doping crystalline silicon with silver results in a photoluminescence center with multiplet zero-phonon structure near 778.9 meV. We show that the published assignments of the vibronic sidebands are wrong, with severe implications for the relative transition probabilities of the luminescence transitions from the excited states. At low temperature, most of the luminescence intensity derives from the phonon sideband associated with a forbidden zero-phonon line through the phonon-assisted coupling of two of the excited states of the center. The effective mass of the vibration is determined from isotope effects to be close to the mass of one Ag atom. Uniaxial stress and magnetic perturbations establish that the current assignment of the electronic structure of the center is incorrect and that it is best described by a new variant on the ''pseudodonor'' model. An electron orbits in an effective T d environment, with an orbital triplet as its lowest-energy state, giving a j ϭ3/2 electron state. A tightly bound hole has its orbital angular momentum quenched by the C 3v symmetry of the center, leaving only spin angular momentum (sϭ1/2). These particles couple to give Jϭ2,1,0 states. Using this model, the temperature dependence of both the total luminescence intensity and measured radiative decay time can be understood. These data allow an estimate to be made of the thermally induced transition rate of the electron from the effective-mass excited states into the conduction band.

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“…20͔͒ has been reported, although its relation to an isolated neutral gold atom is under dispute and requires further confirmation. In the IR absorption measurements for silver-doped silicon 5 the observation of four lines for the 1s(EϩT 2 ) multiplet indicates that the center has orthorhombic-I (C 2v ) symmetry ͑or lower͒. Based on the vacancy model 23 this spectrum was then postulated to arise from a neutral substitutional silver dopant.…”

Section: A Si-nl56 Centermentioning

confidence: 99%

“…Deep-level transient spectroscopy 3,4 ͑DLTS͒ revealed deep donor and deep acceptor levels at E v ϩ0.34 eV and E c Ϫ0.54 eV, respectively, and associated them with a silver dopant of amphoteric character. Using photothermal-ionization spectroscopy and Fourier-transform infrared transmission spectroscopy Olajos et al 5 investigated the excitation spectra of electronic excited states in silverdoped silicon and identified those as arising from the deep state of the, probably substitutional, silver donor. Recent photoluminescence measurements showed a dominating Agrelated spectrum with three no-phonon lines in the 780-meV region associated with the spin-triplet and spin-singlet states of a bound exciton.…”

Section: Introductionmentioning

confidence: 99%

Electron-paramagnetic-resonance study of silver-induced defects in silicon

et al. 1997

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In this paper two electron-paramagnetic-resonance spectra are reported in silicon doped with silver in a water vapor atmosphere. These centers, labeled Si-NL56 and Si-NL57, show the orthorhombic-I and trigonal symmetries, respectively, and an effective electron spin Sϭ1/2. Based on studies with enriched silver isotopes and analysis of the observed twofold hyperfine splitting, the participation of one silver atom is established for both centers. The Si-NL56 center is identified as an isolated substitutional silver atom. Due to the presence of an additional hyperfine interaction with a nuclear spin Iϭ5/2, the Si-NL57 spectrum is assigned to a complex of silver with another impurity introduced during the diffusion process. Taking into account the sample preparation procedure, the Si-NL57 center is attributed to an Al s -Ag i pair in a negative charge state.

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High-resolution spectroscopy of silver-doped silicon

Cited by 36 publications

References 14 publications

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

Optical properties of a silver-related defect in silicon

Electron-paramagnetic-resonance study of silver-induced defects in silicon

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