High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

Kang, Hee Bok; Hong, Suk-Kyoung; Song, Yong Wook; Sung, Man Young; Choi, Bok‐Gil; Chung, Jayong; Lee, Jong Wook

doi:10.4218/etrij.08.0108.0338

Cited by 7 publications

(1 citation statement)

References 1 publication

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“…On the other hand, the memory density of the FeRAM under mass production is still at the level of 4 Mb (by Ramtron). The present main applications of the commercialized FeRAM are low-density nonvolatile memory embedded into radiofrequency identification (RFID) cards [14] and low-power battery backup memory replacing the static random access memory (SRAM). Eventually, the huge expectations for the FeRAM turned out to be somewhat different from what they had in prospect, to the contrary, the Flash memories keep the overwhelmingly dominant position in the nonvolatile memoryrelated industries thanks to their fascinating technology improvements and tremendously increasing needs for them.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Yoon

Yang

Byun

et al. 2011

Semicond. Sci. Technol.

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Organic-inorganic hybrid-type nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting active channel are a very promising solution to the memory devices having both features of low-cost and high-performance, which are embeddable into the next-generation flexible and transparent electronics. In this paper, we discuss some important issues for this proposed device, such as device structure design, process optimization and memory array integration. Promising feasible applications and remaining technology issues to solve were also discussed.

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Section: Introductionmentioning

confidence: 99%

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Yoon

Yang

Byun

et al. 2011

Semicond. Sci. Technol.

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Design of logic process based low-power 512-bit EEPROM for UHF RFID tag chip

Jin

Lee

et al. 2010

J. Cent. South Univ. Technol.

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A 512-bit EEPROM IP was designed by using just logic process based devices. To limit the voltages of the devices within 5.5 V, EEPROM core circuits, control gate (CG) and tunnel gate (TG) driving circuits, DC-DC converters: positive pumping voltage (V PP =4.75 V), negative pumping voltage (V NN =−4.75 V), and V NNL (=V NN /2) generation circuit were proposed. In addition, switching powers CG high voltage (CG_HV), CG low voltage (CG_LV), TG high voltage (TG_HV), TG low voltage (TG_LV), V NNL_CG and V NNL_TG switching circuit were supplied for the CG and TG driving circuit. Furthermore, a sequential pumping scheme and a new ring oscillator with a dual oscillation period were proposed. To reduce a power consumption of EEPROM in the write mode, the reference voltages V REF_VPP for V PP and V REE_VNN for V NN were used by dividing V DD (1.2 V) supply voltage supplied from the analog block in stead of removing the reference voltage generators. A voltage level detector using a capacitive divider as a low-power DC-DC converter design technique was proposed. The result shows that the power dissipation is 0.34 µW in the read mode, 13.76 µW in the program mode, and 13.66 µW in the erase mode.

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Positioning system for miners based on RFID

Tian

Zhu

2011

2011 International Conference on Multimedia Technology

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High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

Cited by 7 publications

References 1 publication

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Design of logic process based low-power 512-bit EEPROM for UHF RFID tag chip

Positioning system for miners based on RFID

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