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To elucidate the prevalence and clinical implications of antineutrophil cytoplasmic antibody (ANCA) in lupus nephritis (LN), we examined ANCA by indirect immunofluorescence and by ELISA against antilactoferrin (anti-LF) and antimyeloperoxidase (anti-MPO) antibody. To discriminate perinuclear ANCA (pANCA) with antinuclear antibody (ANA), all the ANCA-positive sera were tested again after incubating patients’ sera with single-stranded (SS) and double-stranded (ds) DNA. These results were compared with clinicopathologic manifestations and clinical courses of LN. ANCA was positive in 19 (37.3%) of 51 LN patients. Among these LN patients, 3 had cytoplasmic ANCA (cANCA) and 16 had pANCA. ANCA was not found in 8 SLE patients without nephritis and 30 normal controls. The presence of ANCA, particularly pANCA, was associated with the presence of nephritis (18/51 cases vs. 0/8 cases, p < 0.05), especially with diffuse proliferative lupus nephritis, WHO class IV (17/18 cases vs. 21/31 cases, p < 0.05) as well as the presence of anti-dsDNA antibody (17/19 cases vs. 18/30 cases, p < 0.05). Patients with ANCA frequently had deterioration of renal function (3/16 vs. 0/26 cases). Anti-LF antibody was positive in 13 patients. Among those, 12 patients had nephritis. Five patients with anti-LF antibody did not have ANCA, but 7 had pANCA, and 1 had cANCA. Patients with anti-LF antibody had lower initial creatinine levels than those without it [serum creatinine (mg/dl): 0.78 (0.6–1.0) vs. 1.43 (0.5–5.0), p < 0.05]. Anti-MPO antibody was positive in only 1 patient, suggesting that MPO is a rare antigen for ANCA in LN.

New ZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO 2 and amorphous phase Al 2 O 3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5Å and low leakage current density of 0.35fA/cell, which meet leakage current criteria of 0.5fA/cell for mass production. ZAZ TIT capacitor showed smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550℃ anneal. TDDB (Time Dependent Dielectric Breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range.

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The metal-ferroelectric-metal (MFM) capacitor in ferroelectric random access memory (FeRAM) security embedded RFID chip is used not only in the memory cell region but also used in the analog and digital circuit area for low cost capacitance device and high security algorithm. MFM based security FeRAM braces for a wide range of security threats such as reverse engineering, cloning, and tampering. High security performance solution of on-chip FeRAM based register key is implemented to prepare against security attacking. RF transferring sensitivity properties with MFM capacitor are almost same or better than that with poly-insulator-poly (PIP) capacitor and metal-insulator-metal (MIM), and MOS capacitor. The measured power consumption of FeRAM embedded RFID chip without crypto processor engine is about 10µW with the write sensitivity of -18dBm.