New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

Cho, Hojin; Kim, Young Dae; Park, Dong Su; Lee, Euna; Park, Cheol-Hwan; Jang, Jun; Lee, Keum Bum; Kim, Hai Won; Ki, Young; Han, I. K.; Song, Yong Wook

doi:10.1016/j.sse.2007.09.030

Cited by 105 publications

(56 citation statements)

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“…45 This suggests that, in principle, also much thinner inorganic electrolyte layers should be possible, while maintaining sufficient insulation. Also, nanolaminate techniques such as those used in thin-film capacitor structures 46 could be used to combine sufficient ionic conductivity with good insulating properties. Note that, since the electrolyte has a large area due to the 3D structuring, the current density will be lower and, therefore, the requirements on the ionic conductivity will be lower as well.…”

Section: 43mentioning

confidence: 99%

Atomic layer deposition for nanostructured Li-ion batteries

Knoops

Donders

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

116

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Nanostructuring is targeted as a solution to achieve the improvements required for implementing Li-ion batteries in a wide range of applications. These applications range in size from electrical vehicles down to microsystems. Atomic layer deposition (ALD) could be an enabling technology for nanostructured Li-ion batteries as it is capable of depositing ultrathin films (1-100 nm) in complex structures with precise growth control. The potential of ALD is reviewed for three battery concepts that can be distinguished, i.e., particle-based electrodes, 3D-structured electrodes, and 3D all-solid-state microbatteries. It is discussed that a large range of materials can be deposited by ALD and recent demonstrations of battery improvements by ALD are used to exemplify its large potential.

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Section: 43mentioning

confidence: 99%

Atomic layer deposition for nanostructured Li-ion batteries

Knoops

Donders

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

116

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“…To circumvent these issues with pure ZrO 2 , Al 2 O 3 separated laminates were introduced that came to be known as ZAZ. 12 In order to address the limitations of the Hf x Zr 1-x O 2 system in a similar manner we followed up on the approach suggested by H.J. Kim et al 13 and investigated films laminated with thin alumina layers.…”

Section: Introductionmentioning

confidence: 99%

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

2016

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Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers

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“…Such oxide-based nanolaminates have been studied as materials able to provide good compromise between leakage current density and dielectric permittivity, enhancing charge storage capability of capacitor dielectrics while aiming at the improvement of the performance of, e.g., electroluminescent devices [10,14], field effect transistors [2,7,13,18,20], and memories [5,9,16,21,22]. Especially important industrially are the ZrO 2 -Al 2 O 3 -ZrO 2 structures [24] used in dynamic random access memory cells. Nanolaminates may also perform as gas-diffusion barriers for reliable encapsulation of organic electronics [3], show long term durability as corrosion-protective layers [17], act as optical filters tuning the reflection from silicon substrate [11] or as hard X-ray mirrors [15].…”

Section: Introductionmentioning

confidence: 99%

“…Nanolaminates with large number of interfaces may also have reduced cross-plane thermal conductivity compared to that in chemically homogeneous films [1]. Alternate layering of different materials also reduces the overall roughness of the coating, compared to the single oxides grown to the same thickness [1,8,24,25].…”

Section: Introductionmentioning

confidence: 99%

“…Nanolaminates of single oxides may be grown using different physical and chemical techniques, such as electron beam evaporation [13], sputtering [4], pulsed laser deposition [6] or, as apparently the most controlled method, atomic layer deposition (ALD) [1][2][3]5,7,[9][10][11][12][14][15][16][17][18][22][23][24]26]. Studies on ALD-grown nanolaminates containing rare earth oxides have so far been quite scarce [21,22], though, and none has been grown using Ti and Ho oxides as constituents.…”

Section: Introductionmentioning

confidence: 99%

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Holmium and titanium oxide nanolaminates by atomic layer deposition

Kukli

Link

et al. 2014

Thin Solid Films

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(001) substrates by atomic layer deposition at 300 °C from alkoxide and -diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO 2 and 4.5 nm for Ho 2 O 3 .As-deposited films were smooth and X-ray amorphous. After annealing at 800 °C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho 2 Ti 2 O 7 . The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.

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New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

Cited by 105 publications

References 1 publication

Atomic layer deposition for nanostructured Li-ion batteries

Atomic layer deposition for nanostructured Li-ion batteries

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Holmium and titanium oxide nanolaminates by atomic layer deposition

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