High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

Liu, Kang; Lv, Zhijun; Dai, Bing; Shu, Guoyang; Zhao, Junhong; Liu, Benjian; Xue, Jingjing; Yao, Kaili; Sun, Min; Gao, Ge; Zhu, Jiaqi

doi:10.1016/j.diamond.2018.04.026

Cited by 13 publications

(7 citation statements)

References 30 publications

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“…The spectra were thus curve-tted into two components with a Gaussian line shape. The binding energy of 284.7 eV was attributed to the sp 2 carbon bands and the binding energy of 285.2 eV was attributed to the sp 3 carbon bands [17,21,22].…”

Section: Xps Analysis Of C Element On the Diamond Surfacementioning

confidence: 99%

“…chemically bonded with diamonds, which increased the wettability of the binder to the diamonds and improved the holding force of the binder on the diamonds [8, [14][15][16]. Some researchers have carried out metal catalytic hydrogenation corrosion and oxygen plasma corrosion studies on diamond surfaces, resulting in micro patterns (pits and bulges) on the diamond surfaces, which effectively increased the holding force of the binder on the diamonds [17,18]. The above methods do improve the holding force of the binder on diamonds, but they do not change the self-sharpening property of diamonds and the machining e ciency has not been improved.…”

Section: Introductionmentioning

confidence: 99%

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Research on the bonding properties of vitrified bonds with porous diamonds and the grinding performance of porous diamond abrasive tools

Fang

Long

et al. 2022

Diamond and Related Materials

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Ordinary diamond presents the disadvantages of poor self-sharpening and concentrated grinding stress when it is used as an abrasive. Moreover, this kind of diamond cannot be well wetted by the vitri ed bond, resulting in a lower holding force of the binder to the abrasives (i.e., the diamond is easy to detach from the binder matrix during grinding). These comprehensive factors not only reduce the surface quality of the processed workpiece, but also hinder the processing e ciency. In order to solve these problems, a new type of porous diamond with high self-sharpening properties was prepared using a thermochemical corrosion method in this study. Our results showed a great improvement in pore volume and speci c surface area of the porous diamond compared with ordinary diamond abrasive particles, and the holding force and wettability of vitri ed bond to the porous diamond abrasive particles were also improved.Compared with ordinary diamond abrasive tools, porous diamond abrasive tools showed a 29.6% increase in grinding e ciency, a 15.5% decreased in grinding ratio, a 27.5% reduction in workpiece surface roughness, and the scratches on the silicon wafer surface were reduced and re ned.

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Section: Xps Analysis Of C Element On the Diamond Surfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research on the bonding properties of vitrified bonds with porous diamonds and the grinding performance of porous diamond abrasive tools

Fang

Long

et al. 2022

Diamond and Related Materials

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“…Wet or dry etching of the mask through the patterned resist [18,19], or lift-off technique [20,21] are commonly used lithographic processes, where a masking material more resistant to an increased side etching rate may help to obtain a more precise and repeatable micro-patterning. Alternative methods for obtaining desired side walls angle and micropatterns by anisotropic etching with nanoparticles are being investigated [22,23].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Al and Cu masks used for patterning boron-doped diamonds in oxygen plasma

Marton

Ritomský

Řeháček

et al. 2019

J. Micromech. Microeng.

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In this paper we investigate the influence of different metallic (or metal-based) masking materials and plasma techniques for etching and patterning polycrystalline boron-doped diamond thin films. Lift-off technique was used to prepare various testing mask patterns with dimensions ranging from 1 μm to 15 μm. The results of plasma etching utilizing 100 nm Al and Cu masks are compared. Radio frequency and inductively coupled pure oxygen plasma techniques were used to obtain the fine etched structures. A simple etching scheme describing the obtained results is presented for each type of plasma technique and mask type. Although the Al mask is widely believed to have outstanding properties over other metallic materials, we found that the Cu mask exhibits lower side edge etching for both types of plasma techniques. A formation of thick and crystalline copper oxide layer in contrast with thin amorphous aluminum oxide is believed to be the reason for this behavior. Consequently, the etched structures also possessed much better side wall angles which is a key parameter for micro-fabrication of boron doped diamond microelectrodes, microfluidics, sensors and microelectromechanical devices in general.

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“…For example, Chao et al 27 deposited a layer of nickel with a thickness of 10-150 nm on the surface of the pre-deposited diamond film by electrodeposition and then processed the surface by microwave plasma and catalytic etching machine to prepare porous diamond films for various time intervals. Kang Liu et al 28 used hydrogen plasma and iron catalysis to etch single-crystal diamond, obtaining selective anisotropic etching of porous diamond.…”

mentioning

confidence: 99%

Facile Preparation of Porous Diamond Films via Microwave Plasma Based on Metal Particles Heterogeneous Catalysis Etching

Chu¹,

Ma²,

Guo³

et al. 2023

ECS J. Solid State Sci. Technol.

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The porous diamond film was fabricated via a self-developed microwave plasma chemical vapor deposition (MPCVD) system in H2/Ar plasma by utilizing micrometer-sized diamond films coated with nickel as the starting material. Scanning electron microscopy and Raman spectroscopy were used to evaluate the evolution of the morphology and sp3 phase of porous diamond with changes in the surface treatment process parameters, including the etching temperature and time. The results indicate that once the etching temperature exceeds 700°C, the pitting etching phenomenon can be observed on the surface of the diamond film. In a certain range, increasing the etching time increases the depth of surface holes on diamond film, whereas the microporous density exhibits an inverted parabolic change pattern. The porous diamond films with uniform pores structure can be obtained by adopting optimal etching process parameter when the H2/Ar plasma temperature is determined at 900°C for 30 min. The porous formation mechanism of diamond film is attributed to the nickel particles' heterogeneous catalysis behavior, which promotes the transition route from diamond phase to graphite phase, followed by the preferential etching of graphite phase by H2/Ar plasma.

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High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

Cited by 13 publications

References 30 publications

Research on the bonding properties of vitrified bonds with porous diamonds and the grinding performance of porous diamond abrasive tools

Research on the bonding properties of vitrified bonds with porous diamonds and the grinding performance of porous diamond abrasive tools

Comparison of Al and Cu masks used for patterning boron-doped diamonds in oxygen plasma

Facile Preparation of Porous Diamond Films via Microwave Plasma Based on Metal Particles Heterogeneous Catalysis Etching

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