High sensitive position-dependent photodetection observed in Cu-covered Si nanopyramids

Mei, Chunlian; Huang, Xu; Zou, Bugao; Zhou, Peijian; Gan, Zhikai; Hu, Jieqiong; Zhang, Qian; Wang, Hui

doi:10.1088/1361-6528/aab3f9

Cited by 21 publications

(15 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further normalized spectral responsivity in Figure e shows that the peak photoresponse of this photodetector is around 310 nm illumination, and it is blind to visible and other near-infrared illuminations. This finding is completely different from previously reported silicon nanostructure-based photodetectors (the majority of the peak sensitivity is centered at 1000 nm), including conformal graphene/Si nanoholes, Ti/Si NW array/Au, and Cu/Si nanopyramids …”

Section: Resultscontrasting

confidence: 99%

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Liu

Wang

Lin

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW–1, 4.22 × 103%, and 2.14 × 1010 Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.

show abstract

Section: Resultscontrasting

confidence: 99%

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Liu

Wang

Lin

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…A similar construction of copper‐nanoparticle‐covered random Si nanopyramids (Cu/Si‐pyramid) is also proven to achieve an enhancement of photoelectric performance, indicating a wide applicability of such types of nanostructure. Figure a shows the top view of SEM images of this structure.…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 97%

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

Self Cite

View full text Add to dashboard Cite

Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

show abstract

“…The lateral photovoltage (LPV) sensitivity of a PSD was also improved. Moreover, high sensitive PSD was observed in 3D Cu‐covered Si nanopyramids and the lateral photovoltage sensitivity was enhanced from 74.0 to 157.9 mV mm −1 . 2D PSDs with nanoscale resolution are highly desirable to satisfy high efficiency integration requirements of nanodevices; however, they still have lower spatial resolution.…”

Section: Introductionmentioning

confidence: 95%

Position‐Sensitive Array Photodetector Based on Comb‐Like CdS Nanostructure with Cone‐Shape Branches

Huang

Guo

Weller

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

2D microscale position-sensitive detectors (PSDs) are highly desirable with the degree of integration increase and the size reduction of nanodevices, which are still unavailable. Multichannel devices with outstanding photoelectric properties attract considerable interest as powerful building blocks to be applied in on-chip systems. Here, based on a highly ordered comb-like CdS nanowire array with cone-shape branches through a one-step synthesis strategy, a high-resolution 2D position-sensitive photodetector is realized through variable resistance in different transportation routes and variable optical responses at different parts of the cone-shape branches, which enable accurate position identification of incident light in various zones of nanowire arrays according to photocurrent changes. In a broadband from 310 to 560 nm, the PSD exhibits high sensitivity with 85 and 58 KΩ µm −1 in the trunk and branch part, respectively, and an ultrafast optical response shorter than tens of millisecond. Moreover, a lower conductivity change rate per unit temperature of the PSD (1.625 × 10 −9 A V −1 K −1 ) than that of commercial Sibased PSDs (≈6.67 × 10 −7 A V −1 K −1 ) reveals outstanding low-temperature performance. Finally, the multichannel nanostructure based PSD with nanoscale resolution is applied to high-accuracy quadrant photodetectors.

show abstract

High sensitive position-dependent photodetection observed in Cu-covered Si nanopyramids

Cited by 21 publications

References 29 publications

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Position‐Sensitive Array Photodetector Based on Comb‐Like CdS Nanostructure with Cone‐Shape Branches

Contact Info

Product

Resources

About