“…Nonuniform light irradiation (e.g., from a laser source) causes a photogenerated carrier concentration gradient between the illuminated and nonilluminated regions, which subsequently results in a voltage. A large number of potential applications have been demonstrated based on the LPE such as surface profiling, motion tracking, and angular displacement monitoring. , Position-sensitive detector (PSD), one of the most common application of the LPE, has significantly progressed over the last few decades due to the development of technologies for the synthesis of new materials and heterostructures. LPE-based PSDs can be divided into four categories based on the type of heterostructures including metal–semiconductor (MS) (e.g., Ti (Co,Cu)/Si, graphene/Si, MoS 2 /Si − ), metal-oxide–semiconductor (MOS) (e.g., Co/SiO 2 /Si, SnSe/SiO 2 /Si), oxide/insulator–semiconductor (e.g., Fe 3 O 4 /Si, Bi 2 Te 2.7 Se 0.3 , ITO/Si), and wide band/narrow band semiconductor–narrow band semiconductor (e.g., SiC/Si, − Sb 2 Se 3 /Si, SnSe 2 /Si).…”