High sensitivity and wide-dynamic-range optical receiver for 40 Gbit/s optical communication networks

Vetury, R.; Gontijo, I.; Liu, Yet-zen; Krishnamurthy, K.; Pullela, R.; Rodwell, M.J.W.

doi:10.1049/el:20030023

Cited by 13 publications

(6 citation statements)

References 2 publications

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“…Data from [6] and [24] for the HPT, [6], [7], and [25]- [27] for the PIN-HBT, and [12], [13], [18], [28]- [31] for the APD-HBT have been plotted to compare with experimental data. The differences between calculation and experimental data up to 20 Gb/s are within 1 dB for the HPT and PIN-HBT receivers, which seems reasonable given that measured sensitivity values can vary by as much as 1 dB between identical channels of a PIN-HBT photoreceiver in [32].…”

Section: R Esults and Discussionmentioning

confidence: 99%

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Helme

Houston

Tan

2009

IEEE J. Quantum Electron.

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Abstract-A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage).For a BER =1 0 9 at 40 Gb/s the best sensitivity of approximately 20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately 14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data.

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Section: R Esults and Discussionmentioning

confidence: 99%

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Helme

Houston

Tan

2009

IEEE J. Quantum Electron.

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“…The trans-impedance stage of the TIA was optimized for bandwidth taking into account the photo-diode capacitance / resistance and the bond wire inductance. At 40 Gb/s data rates, the parasitic bond wire inductances between the photodiode and TIA as well as the ground inductance associated with the bond wires connecting the TIA IC to the receiver package are critical and were accounted for in the design 16 . The differential design provides high power supply rejection.…”

Section: Trans-impedance Amplifiermentioning

confidence: 99%

40 Gb/s TDM SYSTEM TRANSCEIVER PROTOTYPE IN InP HBT TECHNOLOGY

Krishnamurthy

Shou

Vetury

et al. 2005

Int. J. Hi. Spe. Ele. Syst.

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A time-division-multiplexing (TDM) system transceiver with 4–channel 10 Gb/s interfaces to achieve 40 Gb/s non-return to zero (NRZ) transmission is presented. The front-end components are implemented in an indium phosphide double hetero-junction bipolar transistor (InP DHBT) technology. They include a 4:1 multiplexer with a voltage controlled oscillator and clock multiplication unit, modulator drivers for electro-absorption and differential lithium-niobate modulators, trans-impedance amplifier, limiting amplifier and 1:4 demultiplexer with clock and data recovery circuit. The transceiver was used to teat optical transmission over a 2.26 km link with a 40 Gb/s, 231-1 pseudo-random bit sequence (PRBS) data. The transmitter achieves better than 12.9 dB extinction ratio, 1 ps added root mean square (RMS) jitter and 4 dBm output power. Without any optical amplification the receiver achieves -9.1 dBm back to back sensitivity at a bit error rate (BER) of 10-12 and a high dynamic range of 12.5 dBm.

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“…However it adds to system size, cost and complexity. We have earlier reported a high sensitivity wide dynamic range 40 Gbit=s receiver composed of an InP based pin photodiode (PD) and an InP HBT transimpedance amplifier (TIA), that achieved 550 V=W conversion gain without using optical amplification [4]. In this Letter, we report a receiver module that also incorporates an InP HBT limiting amplifier (LA) to achieve > 8274 V=W conversion gain and 950 mV p-p limiting differential output.…”

mentioning

confidence: 98%

“…Circuit design: The receiver ( Fig. 1) incorporates an InP HBT LA in addition to the PD and TIA reported earlier [4]. To obtain high linear gain over wide bandwidth the LA uses alternating differential transadmittance (TAS) and transimpedance (TIS) stages (Fig.…”

mentioning

confidence: 99%

“…The LA IC has 24 dB differential gain with 46 GHz bandwidth and 16 mV input sensitivity. A DC offset restoration loop is also included within the receiver [4], which supplies a reference signal that is dependent on the magnitude of the input photo-signal, to balance the differential output of the TIA. The receiver operates from þ5, þ3.3 and À5 V supplies, consuming 1.1 W.…”

mentioning

confidence: 99%

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40 Gbit/s optical receiver module with high conversion gain and sensitivity

et al. 2003

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An optical receiver for 40 Gbit=s communication systems with 8274 V=W conversion gain and 950 mV p-p limiting differential output is reported. A back-to-back sensitivity of À9.4 dBm at a bit error rate of 10 À12 was observed for a 2 31 À 1 pseudorandom binary sequence. The receiver incorporates an InP based pin diode, a transimpedance amplifier and a limiting amplifier. This is the largest conversion gain with high sensitivity reported for 40 Gbit=s receivers without optical amplification.

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High sensitivity and wide-dynamic-range optical receiver for 40 Gbit/s optical communication networks

Cited by 13 publications

References 2 publications

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

40 Gb/s TDM SYSTEM TRANSCEIVER PROTOTYPE IN InP HBT TECHNOLOGY

40 Gbit/s optical receiver module with high conversion gain and sensitivity

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