High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors

Abstract

Abstract:We have developed a UV silicon detector made of silicon and off-stoichiometric silicon dioxide that shows high efficiency and is completely compatible with silicon devices technology. The silicon-based UV detector present a solar cell-like structure which does not require any voltage source. In addition, an off-stoichiometric silicon dioxide film (Silicon Rich Oxide) with silicon nanocrystals has been integrated to this structure. It is shown that the spectral response is due to the high photoluminescence of Si nanocrystals in the visible region when illuminated with UV light and an increase of 100% in the UV detector efficiency is observed with respect to conventional silicon dioxide layers.

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

“…This fact has motivated extensive research by studying its fundamental optical and electronic properties. Thus, it makes this material very attractive for the manufacture of optoelectronic devices, such as photodetectors, solar cells, and light emitters [ 5 , 6 , 7 ]. The SRO films can be obtained by various techniques, such as sputtering [ 8 , 9 ], plasma-enhanced chemical vapor deposition (PECVD) [ 10 , 11 ], low-pressure chemical vapor deposition (LPCVD) [ 12 , 13 ], and hot filament chemical vapor deposition (HFCVD) [ 14 , 15 ].…”