High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

Kashio, Norihide; Kurishima, K.; Fukai, Yoshino K.; Ida, M.; Yoshida, Shoji

doi:10.1109/ted.2009.2037461

Cited by 34 publications

(18 citation statements)

References 17 publications

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“…We confirmed lifetime of over 1 x 10 8 h for InP HBTs for 40-Gbit/s ICs with passivation ledge structures [3] and with refractory emitter electrodes [4]. On the other hand, we have also developed reliable InP HBTs with high-frequency performance up to f t and f max of over 300 GHz [5,6,7]. These devices have sub-micrometer dimensions aiming high-speed and low-power operation of over-100-Gbit/s ICs.…”

Section: Introductionmentioning

confidence: 65%

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Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT

Fukai

Kurishima

Kashio

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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The reliability of sub-micrometers InP-based heterostructure bipolar transistors (HBTs), which are being applied in over-100-Gbit/s ICs, was examined at high current injection conditions. These HBTs had a ledge structure and an emitter electrode consisting with a refractory metal of W, which suppressed surface degradation and metal diffusion, respectively. We conducted bias-temperature (BT) stress tests in several stress conditions of current densities, J c , up to 10 mA/μm 2 in order to investigate the stability of InP/InGaAs emitter-base (E-B) junction. At 10 mA/μm 2 operation with the junction temperature of 210 °C, dc current gain, E, was stable for 1000 h. The activation energy for the reduction of E, however, decreased to 1.1 eV, which is suggesting the degradation of the emitter-base (E-B) junction. For the reliability of sub-micrometer, high-speed and low-power InP HBTs at high current densities, stability around the E-B junction has become more dominant.

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Section: Introductionmentioning

confidence: 65%

“…Next, dry etching is performed to form the emitter mesa structure. The emitter layer is used as a ledge layer whose thickness is 15 nm [7]. The surface of the ledge layer is covered with SiN films for passivation [6].…”

Section: Methodsmentioning

confidence: 99%

Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT

Fukai

Kurishima

Kashio

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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“…The driver IC was fabricated using InP HBT technology [6,7]. To reduce the module size, we designed the two-channel driver IC with a fully lumped configuration to save active IC area [8].…”

Section: Driver Modulementioning

confidence: 99%

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

Wakita

Nagatani

Kanazawa

et al. 2015

IEICE Electron. Express

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This paper presents a compact driver module for InP MachZehnder modulator (MZM). The size of the driver module is 14 mm × 8 mm × 2.8 mm. We reduce the size of this driver module by integrating two channels for the driver IC, which doesn't require any external bias tee, and by making the driver package small. With this driver module and InP MZM module mounted on evaluation board, we obtained a well separated 16-QAM constellation at the speed of 28 Gbaud.

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“…The driver IC was fabricated by using InP HBT technology [4,5], which has excellent high-frequency performance and high breakdown voltage. Fig.…”

Section: Driver Ic Designmentioning

confidence: 99%

36-GHz-bandwidth quad-channel driver module using compact QFN package for optical coherent systems

Wakita

Nagatani

Nosaka

2015

2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS)

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This paper presents a small quad-channel driver module for optical modulators in digital coherent systems. To decrease the size of the module, we designed a compact quadchannel package. The size of the package is 14 x 8 x 2.8 mm 3 . The bandwidth of the driver module is 36 GHz with maximum differential gain of 15 dB. Waveforms with clear eye-openings at symbol rates of 32 and 50 Gbaud were observed. To the best of our knowledge, this is the most compact quad-channel driver module in 50-Gbaud class.

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High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

Cited by 34 publications

References 17 publications

Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT

Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

36-GHz-bandwidth quad-channel driver module using compact QFN package for optical coherent systems

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