High Speed Current Mode Sense Amplifier for SRAM Applications

Abstract

The sense amplifier is one of the most important components of semiconductor memories used to sense stored date. This plays an important role to reduce the overall sensing delay and voltage. Earlier voltage mode sense amplifiers are used to sense the date it sense the voltage difference at bit and bitb lines but as the memory size increase the bit line and date line capacitances increases. As a result large time is required by capacitance to discharge so sensing delay and power dissipation increase. Used that sense the current directly from bit and bitb lines and reduce the sensing delay. This technique is used in current mode sense amplifiers. This thesis work explores the design and analysis of current mode sense amplifier using Tanner tool (14.0) version. The simulation is carried out at 1.5V / 0.13um technology using tanner (14.0 Version) tool. The results are verified with the existing results at 1.8V / 0.18um CMOS technology.

Low Power Reduction Techniques Implementation and Analysis in Sense Amplifier Circuit Configurations

“…The technology and circuit activate the sensing amplifier when the gap is significant enough to allow (SAen). The differential output of the inverters can then be converted to full rail output via a positive feedback loop [11]. The low-voltage bit line (V1), which is grounded, is connected to one of the sensing amplifier's outputs nodes.…”

Design of Current Mode MTCMOS Sense Amplifier with Low Power and High Speed

“…The speed of VLSI chips is increasingly limited by signal delay in long interconnect lines. Major speed and power improvements are possible when using current mode rather than voltage mode signal transporting techniques [10].Moreover, with current mode sensing, reduction in the size of memory cell is another possibility [11]. This designed sense amplifier is based on the current mode approach.…”

Using Power Reduction Techniques, a Comparison of Differential and Latch Type Sense Amplifier Circuits

“…Memory devices" peripheral circuitry largely relies on SA for their operation. [13][14][15][16] Power-operated SA can decrease the gap between memory cells and the arbitrary logic levels of Boolean circuits by converting signals from bits to digital logical levels. This is accomplished by converting the signals.…”