High-Speed Direct Writing of MoSe<sub>2</sub> by Maskless and Gas-Free Laser-Assisted Selenization Process

Rho, Yoonsoo; Im, Healin; Wang, Letian; Eliceiri, Matthew; Blankenship, Brian W.; Kim, Sunkook

doi:10.1021/acs.jpcc.0c04914

Cited by 4 publications

(9 citation statements)

References 25 publications

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“…Besides, direct laser writing can crystallize as-deposited amorphous precursors mixed of dopants and constituents with predetermined molar ratios into doped/alloyed TMDs. [84] This report consolidated several selected recent works concerning the substitutional doping and alloying of 2D TMDs in each thin-film technique. In particular, the substitutional doping techniques have advanced significantly in the past few years and are gradually phasing out the unreliable surface functionalization methods for industrial application.…”

Section: Thin-film Techniques For the Compositional Engineering Of 2d Tmdsmentioning

confidence: 57%

“…Laser-assisted photonic crystallization uses amorphous precursors with predetermined molar ratios deposited by e-beam evaporation, [84] magnet-sputtering, [144] and PLD. [145] Rho et al detailed a comprehensive study on direct laser writing of MoSe 2 by laser-assisted selenization process.…”

Section: Laser-assisted Modifications and Growthmentioning

confidence: 99%

“…Laser‐assisted photonic crystallization uses amorphous precursors with predetermined molar ratios deposited by e‐beam evaporation, [ 84 ] magnet‐sputtering, [ 144 ] and PLD. [ 145 ] Rho et al.…”

Section: Top–down Approachesmentioning

confidence: 99%

Section: Laser-assisted Modifications and Growthmentioning

confidence: 99%

mentioning

confidence: 99%

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Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

et al. 2021

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Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin‐film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom–up methods that grow doped samples on substrates directly and top–down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next‐generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

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Section: Thin-film Techniques For the Compositional Engineering Of 2d Tmdsmentioning

confidence: 57%

Section: Laser-assisted Modifications and Growthmentioning

confidence: 99%

Section: Top–down Approachesmentioning

confidence: 99%

Section: Laser-assisted Modifications and Growthmentioning

confidence: 99%

mentioning

confidence: 99%

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Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

et al. 2021

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A Single MoSe₂ Fluffy Nanosphere for Localized Light Confinement

Liu

Yan

Sui

et al. 2023

ACS Appl. Nano Mater.

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Manipulating and focusing the light in a small sphere has been widely investigated; however, the impact of a special fluffy structure on the optical property still remains unclear. Here, we employ a MoSe2 fluffy nanosphere with feature-shaped edges as a three-dimensional model system to study the localized light confinement effect and analyze the inherent mechanism for strong light absorption properties at a single-particle level. The experimental absorption spectrum displays a stable feature without an obvious band-edge transition in a broad-band range, revealing the broad-band absorption property of MoSe2 fluffy nanospheres. The localized enhancement factor inside a fluffy nanosphere is 90.8, and the surrounding lateral scattering area decreases 59.9% according to optical numerical computation. The formation of localized light confinement could originate from restricted optical propagation, such as multiple light scattering, light wave interference and antireflectance features and from rapid absorption and conversion of the incident photons into various energy forms, such as photoelectrons, phonons, and heat. The results not only reveal the impact of fluffy structure on optical responses but also broaden the potential applications of MoSe2 in optical absorbers and single-photon devices.

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Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

et al. 2022

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We study a low voltage short pulse operating multilevel memory based on van der Waals heterostack (HS) n-MoSe2/n-MoS2 channel field-effect transistors (FETs). Our HS memory FET exploited the gate voltage (VGS)-induced trapping/de-trapping phenomena for Program/Erase functioning, which was maintained for long retention times owing to the existence of heterojunction energy barrier between MoS2 and MoSe2. More interestingly, trapped electron density was incrementally modulated by the magnitude or cycles of a pulsed VGS, enabling the HS device to achieve multilevel long-term memory. For a practical demonstration, five different levels of drain current were visualized with multiscale light emissions after our memory FET was integrated into an organic light-emitting diode pixel circuit. In addition, our device was applied to a synapse-imitating neuromorphic memory in an artificial neural network. We regard our unique HS channel FET to be an interesting and promising electron device undertaking multifunctional operations related to the upcoming fourth industrial revolution era.

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High-Speed Direct Writing of MoSe₂ by Maskless and Gas-Free Laser-Assisted Selenization Process

Cited by 4 publications

References 25 publications

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

A Single MoSe₂ Fluffy Nanosphere for Localized Light Confinement

Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

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High-Speed Direct Writing of MoSe2 by Maskless and Gas-Free Laser-Assisted Selenization Process

Cited by 4 publications

References 25 publications

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

A Single MoSe2 Fluffy Nanosphere for Localized Light Confinement

Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

Contact Info

Product

Resources

About

High-Speed Direct Writing of MoSe₂ by Maskless and Gas-Free Laser-Assisted Selenization Process

A Single MoSe₂ Fluffy Nanosphere for Localized Light Confinement