High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking

Kurishima, K.; Nakajima, Hiroki; Kobayashi, Takashi; Matsuoka, Yutaka; Ishibashi, Tadao

doi:10.1063/1.109368

Cited by 26 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of an energy barrier for electrons (DE C,B ) results in both transmission and reflection at the interface and prevents unimpeded transport to the collector. This is similar in effect to the phenomenon known as current blocking in HBTs; 14 however, it differs in that the energy barrier lies in the base and is not susceptible to lowering with increased V CB . It leads to increased confinement of carriers in the base which is expected to increase recombination lifetime.…”

mentioning

confidence: 76%

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery

Wang

Dallesasse

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the device. A greater ΔEC,B results in lower transistor current gain (β) and higher optical output power, indicating increased carrier confinement and recombination in the base. For a device with ΔEC,B = 41 meV, the measured bias-dependent optical frequency response and subsequent data fitting yield a short recombination lifetime of 30 ps in the base and a small resonance peak of 1.5 dB. A device with ΔEC,B = 82 meV exhibits a longer recombination lifetime of 70 ps and a larger resonance peak of 4 dB.

show abstract

mentioning

confidence: 76%

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery

Wang

Dallesasse

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The In0.53Ga0.47As alloy can be used for radiation detection in the range 0.9~1.7 μm. The wavelength response of the compound can be extended up to 3.6 μm by increasing the In content [1,2].The small bandgap energy and superior carrier transport properties of InGaAs have made it widely used in high-speed devices such as heterostructure bipolar transistors (HBTs) [3].…”

Section: Introductionmentioning

confidence: 99%

InP and InGaAs grown on InP substrate by molecular beam epitaxy

Yu¹,

Gao²,

Wang³

et al. 2022

MATEC Web Conf.

View full text Add to dashboard Cite

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

show abstract

“…One straightforward solution to this problem is to make use of bandgap engineering and insert a wider gap InP (or AlGaInAs) collector layer to reduce impact ionization rates and thus improve the breakdown voltage. Unfortunately, this approach requires the use of some form of grading at the base/colllector (B/C) interface in order to smooth out the blocking potential that must be overcome by electrons in order to be injected into the collector layer (see Fig.1) [1][2][3]. It is well known that failure to properly address the collector current blocking effect in DHBTs results in high collector offset voltages, low gains because of enhanced base recombination, and very poor cutoff frequencies because of excessive carrier storage in the base layer.…”

Section: Introductionmentioning

confidence: 99%

300 GHz InP/GaAs(1-x)Sb(x)/InP DHBTs

Bolognesi

Dvorak

Pitts

et al. 2001

31st European Solid-State Device Research Conference

View full text Add to dashboard Cite

We report the implementation of 300 GHz f T and f MAX InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with BV CEO = 6 V in structures using a 200 Å carbon-doped base layer and a 2000 Å InP collector. The epitaxial layers are grown by MOCVD, and do not necessitate any form of compositional grading either at the E/B or the B/C heterojunction because of the non-blocking nature of the staggered band lineup at InP/GaAsSb interfaces. The absence of compositional grading between the base and the wider gap InP emitter and collector layers greatly simplifies epitaxial growth as well as device fabrication because selective wet etching can be used to expose each layer separately and reliability. The resulting structure is therefore eminently manufacturable. The measured transistor performance suggests these devices should be suitable for 80-100 Gbit/s operation.

show abstract

High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking

Cited by 26 publications

References 9 publications

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

InP and InGaAs grown on InP substrate by molecular beam epitaxy

300 GHz InP/GaAs(1-x)Sb(x)/InP DHBTs

Contact Info

Product

Resources

About