High-Speed Light Signal Transmitters for Optical Communication Based on Ultraviolet Radiation

Li, Xin; Wu, Yue; Yuan, Jialei; Ni, Shuyu; Qin, Chuan; Jiang, Yan; Li, Jie; Wang, Yongjin

doi:10.3390/app10020693

Applied Sciences

2020

DOI: 10.3390/app10020693

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High-Speed Light Signal Transmitters for Optical Communication Based on Ultraviolet Radiation

Xin Li

Yue Wu

Jialei Yuan

et al.

Abstract: A light signal transmitter based on ultraviolet radiation is realized on GaN-on-silicon platform. The light signal transmitter with ultra-small active area is fabricated by a double-etching process. The absolute value of negative junction capacitance of transmitter is as low as the pF (picofarads) scale in positive bias voltage. Small capacitance is beneficial to improve the communication performance of a transmitter. The dominant EL (electroluminescence) peak of transmitter is located at about 380 nm in the u… Show more

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Cited by 3 publications

References 23 publications

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Enhancement of optical phonons limited electron mobility in an AlGaN step-shaped quantum well

Jia

Ban

2022

AIP Advances

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Achieving high conductivity in n-type AlGaN of deep ultraviolet light-emitting diodes is still a challenge nowadays. In the Lei–Ting equilibrium equation method framework, a four-layer quantum well with n-Al0.7Ga0.3N barriers and an Al0.55Ga0.45N/Al xGa1− xN bi-component well could obtain a much higher electron mobility μT than that in a single-component quantum well over a relatively broad Al content range 0.56 < x < 0.68. While the built-in electric field induces strong confinement, pushing the electron to the interface, the optical phonon mode at this interface could be component-modulated to disappear due to the ternary mixed crystal effect. A significant enhancement of electron mobility can be achieved by avoiding the scattering from optical phonons at the interface where the electron gathers. The optical phonon limited μT could reach 7966 cm2/V s at x = 0.58, which is almost five times of 1518 cm2/V s in the case of x = 0.55 and ten times of 822 cm2/V s for x = 0.70. Such a step-shaped quantum well with high electron mobility could be an alternate or insert layer to the high Al content n-layer to alleviate the current crowding.

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Enhancement of optical phonons limited electron mobility in an AlGaN step-shaped quantum well

Jia

Ban

2022

AIP Advances

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760 Mbps ultraviolet wireless communication based on a transmitter with AlGaN/InGaN MQWs

Li¹,

Chen²,

Wang³

et al. 2022

Appl. Opt.

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III-nitride LEDs offer a solution for ultraviolet (UV) high-speed communication as a transmitter with high performance. This paper focuses on a transmitter with AlGaN/InGaN multi-quantum wells (MQWs) for UV communication. The transmitter is realized on a GaN-on-silicon platform by a double etching process. The emission region of the transmitter with a small area is beneficial for improving the data rate of UV communication. The emission peak keeps stable at 376.48 nm in the UVA band. The transmission with 300 Mbps is obtained in a UV communication system setup with on-off keying (OOK) modulation. We realize a digital signal transmission up to 760 Mbps by bit-loading discrete multi-audio (DMT) modulation.

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Electrically pumped optomechanical beam GaN-LED accelerometer based on the quantum-confined Stark effect

Zhu¹,

X²,

Zhang³

et al. 2023

Photon. Res.

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Micro-nano optomechanical accelerometers are widely used in automobile, aerospace, and other industrial applications. Here, we fabricate mechanical sensing components based on an electrically pumped GaN light-emitting diode (LED) with a beam structure. The relationship between the blueshift of the electroluminescence (EL) spectra and the deformation of the GaN beam structure based on the quantum-confined Stark effect (QCSE) of the InGaN quantum well (QW) structure is studied by introducing an extra mass block. Under the equivalent acceleration condition, in addition to the elastic deformation of GaN-LED, a direct relationship exists between the LED’s spectral shift and the acceleration’s magnitude. The extra mass block (gravitational force: 7.55×10−11 N) induced blueshift of the EL spectra is obtained and shows driven current dependency. A polymer sphere (PS; gravitational force: 3.427×10−12 N) is placed at the center of the beam GaN-LED, and a blueshift of 0.061 nm is observed in the EL spectrum under the injection current of 0.5 mA. The maximum sensitivity of the acceleration is measured to be 0.02 m/s2, and the maximum measurable acceleration is calculated to be 1.8×106 m/s2. It indicates the simultaneous realization of high sensitivity and a broad acceleration measurement range. This work is significant for several applications, including light force measurement and inertial navigation systems with high integration ability.

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High-Speed Light Signal Transmitters for Optical Communication Based on Ultraviolet Radiation

Cited by 3 publications

References 23 publications

Enhancement of optical phonons limited electron mobility in an AlGaN step-shaped quantum well

Enhancement of optical phonons limited electron mobility in an AlGaN step-shaped quantum well

760 Mbps ultraviolet wireless communication based on a transmitter with AlGaN/InGaN MQWs

Electrically pumped optomechanical beam GaN-LED accelerometer based on the quantum-confined Stark effect

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