High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes

Leroy, Jonathan; Crunteanu, Aurelian; Bessaudou, Annie; Cosset, Françoise; Champeaux, Corinne; Orlianges, Jean‐Christophe

doi:10.1063/1.4721520

Cited by 121 publications

(100 citation statements)

References 26 publications

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“…2a A notable aspect of the I-V curves measured on our devices is that the electrically-driven resistance change (ΔR E = R(Off)/R(On)) is about three orders of magnitude across the E-MIT, essentially equivalent to the thermally-driven resistance change (ΔR T ) measured in R-T from room temperature to 100 °C. The ΔR E observed is significantly larger than most literature reports, [2][3][4][5][6][7][8] as noted in the introduction, and the comparable ΔR E and ΔR T values suggest that the full VO 2 device volume is being switched. In the above cited references, film thicknesses and metrology for determining ΔR E are similar to our study, and thus it is reasonable to make a direct comparison.…”

Section: A DC Characterizationmentioning

confidence: 50%

“…In this case, the switch is regarded as On before the oscillations dampen out. This is the definition typically found in the VO 2 E-MIT literature, 2,8,9 although it may not be as relevant as the former definition for electronic device design. With this definition based solely on the voltage jump, we have Δt j = 14.1 ± 2.7 ns, of the same order as quoted in the literature cited above considering differences in device dimensions.…”

Section: B Transient Analysis Of Electrical Switchingmentioning

confidence: 99%

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Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Zhou

Fisher

et al. 2013

Journal of Applied Physics

103

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Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO 2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10 3 ) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO 2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure Sparameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state.We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.2

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Section: A DC Characterizationmentioning

confidence: 50%

Section: B Transient Analysis Of Electrical Switchingmentioning

confidence: 99%

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Zhou

Fisher

et al. 2013

Journal of Applied Physics

103

View full text Add to dashboard Cite

show abstract

“…In the work [92], it is determined as 4.5 ns for the interelectrode gap of d = 125 nm in a planar switch. Theoretical estimates, which are consistent with the experimental data, yield t d ≈ 1 ns for d = 20 nm [93].…”

Section: Transition Mechanism: the Role Of Electron Correlationsmentioning

confidence: 99%

“…Thus, in VO 2 the MIT occurs at a certain n = n с , and it does not matter what is the way of the initiation of this transition -either under heating up to Т = Т t (i.e. as the result of the equilibrium thermal generation of carriers), or under photo-generation [63], [64], [86]- [91], injection [44], or high-field generation at switching [51], [52], [68], [92]- [94]. The transition at n = n c (T < T t ) is equivalent to the fact that the value of T t decreases with increasing electron density [68].…”

Section: Electronic Control Of the Mit At Switchingmentioning

confidence: 99%

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

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-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

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“…[1][2][3][4] Currently, geometries at the nanoscale are patterned primarily via serial writing tools such as scanning-electron-beam lithography, scanning-ion-beam lithography, and scanningprobe lithography. Although these tools offer high resolution and flexibility, their slow writing speeds prevent patterning of nanostructures over large areas.…”

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confidence: 99%

Nanopatterning of diarylethene films via selective dissolution of one photoisomer

Cantu

Andrew

Menon

2013

Applied Physics Letters

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The ability to pattern nanometric features on various substrates with high throughput, accuracy, and uniformity is the key driving force enabling novel applications in nanophotonics, nanoelectronics, nano-electro-mechanical systems, and nanofluidics. Patterning via Optical Saturable Transitions (POST) is an optical nanopatterning technique that circumvents the far-field diffraction limit by exploiting the linear switching properties of thermally stable photochromic molecules. Previously, POST was enabled by an electrochemical oxidation “locking step.” In this letter, we report an electrode-free “locking step” that exploits the difference in solubility between the two isomeric states of a photochromic molecule in a polar solvent. The reported method obviates the need for a conducting underlayer and also reduces the number of required steps. Using this method, we demonstrated isolated lines of width ∼λ/4 and spacing between features as small as ∼λ/2.5 for an exposure wavelength of λ.

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High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes

Cited by 121 publications

References 26 publications

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Nanopatterning of diarylethene films via selective dissolution of one photoisomer

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